component
RU8205C6
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Shenzhen ruichips Semicon MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRU8205C6
Shenzhen ruichips Semicon · MOSFETs · SOT-23-6
RU8205C6 from Shenzhen ruichips Semicon, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDSS 20V, ID 6A at TA=25°C, RDS(ON) 18mΩ typ at VGS=4.5V). |
| 2 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 5 (VDSS 20V, ID 6A at TA=25°C). |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDSS 20V, ID 6A at TA=25°C, RDS(ON) 18mΩ typ at VGS=4.5V). |
| 4 | G2 | input | Gate of MOSFET 2 (VGSS ±12V, threshold 0.5V min / 0.7V typ / 1.5V max at IDS=250µA). |
| 5 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 2 (VDSS 20V, ID 6A at TA=25°C). |
| 6 | G1 | input | Gate of MOSFET 1 (VGSS ±12V, threshold 0.5V min / 0.7V typ / 1.5V max at IDS=250µA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen ruichips Semicon |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Diode Continuous Forward Current | IS | 1.7 | A | TA=25°C, mounted on large heat sink | 1 | ||
| Pulse Drain Current | IDP | 24 | A | 300µs pulse, TA=25°C | 1 | ||
| Continuous Drain Current | ID | 6 | A | VGS=4.5V, TA=25°C | 1 | ||
| Continuous Drain Current | ID | 4.5 | A | VGS=4.5V, TA=70°C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.75 | W | TA=70°C | 1 | ||
| Thermal Resistance-Junction to Ambient | RqJA | 100 | °C/W | Mounted on 1 inch square copper board, t≤10sec | 1 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.5 | V | VDS=VGS, IDS=250µA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 18 | 22 | mΩ | VGS=4.5V, IDS=6A; pulse test | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 23 | 28 | mΩ | VGS=2.5V, IDS=5A; pulse test | 2 |
CAD (KiCad official)
- Symbol:
RU8205C6 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
ru8205c6-etched.step/ru8205c6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ru8205c6.step/ru8205c6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen ruichips Semicon datasheet (7 pp, sha256
4f3618417bb95a73, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).