component

RU7080L

Public Made by Adom

by adom

Shenzhen ruichips Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorru7080lfactory-2.0.0extractor-text

Verified RU7080L

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: RU7080L · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-44lr4o6a/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ru7080l.kicad_sym✓ ru7080l.kicad_mod✓ ru7080l.step
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Ray Publish 0.1.0 082d12d 6d ago

RU7080L

Shenzhen ruichips Semicon · MOSFETs · TO-252

RU7080L from Shenzhen ruichips Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±25 V with a typical threshold of 3 V (2 V min, 4 V max).
2 D passive Drain (also the tab); drain-source voltage is rated 70 V with 80 A continuous drain current at TC=25°C.
3 S passive Source; diode continuous forward current is 80 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Shenzhen ruichips Semicon
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 70 V TC=25°C 1
Gate-Source Voltage VGSS -25 25 V TC=25°C 1
Maximum Junction Temperature TJ 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Diode Continuous Forward Current IS 80 A TC=25°C 1
300µs Pulse Drain Current Tested IDP 320 A TC=25°C 1
Continuous Drain Current (VGS=10V) ID 80 A TC=25°C 1
Continuous Drain Current (VGS=10V) ID 56 A TC=100°C 1
Maximum Power Dissipation PD 125 W TC=25°C 1
Maximum Power Dissipation PD 62.5 W TC=100°C 1
Avalanche Energy, Single Pulsed EAS 225 mJ IAS=30A, VDD=48V, RG=50Ω, Starting TJ=25°C 1
Thermal Resistance Junction to Case RθJC 1.2 °C/W 1
Thermal Resistance Junction to Ambient RθJA 100 °C/W Mounted on Large Heat Sink 1
Drain-Source Breakdown Voltage BVDSS 70 V VGS=0V, IDS=250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=70V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 µA VDS=70V, VGS=0V, TJ=125°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250µA 2
Gate Leakage Current IGSS -100 100 nA VGS=±25V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 5.7 8 mΩ VGS=10V, IDS=40A 2
Diode Forward Voltage VSD 1.2 V ISD=40A, VGS=0V 2
Reverse Recovery Time trr 45 ns ISD=40A, dISD/dt=100A/µs 2
Reverse Recovery Charge Qrr 93 nC ISD=40A, dISD/dt=100A/µs 2
Gate Resistance RG 1.5 Ω VGS=0V, VDS=0V, F=1MHz 2
Input Capacitance Ciss 3450 pF VGS=0V, VDS=35V, Frequency=1.0MHz 2
Output Capacitance Coss 930 pF VGS=0V, VDS=35V, Frequency=1.0MHz 2
Reverse Transfer Capacitance Crss 230 pF VGS=0V, VDS=35V, Frequency=1.0MHz 2
Turn-on Delay Time td(ON) 40 ns VDD=35V, IDS=40A, VGEN=10V, RG=4.7Ω 2
Turn-on Rise Time tr 132 ns VDD=35V, IDS=40A, VGEN=10V, RG=4.7Ω 2
Turn-off Delay Time td(OFF) 180 ns VDD=35V, IDS=40A, VGEN=10V, RG=4.7Ω 2
Turn-off Fall Time tf 90 ns VDD=35V, IDS=40A, VGEN=10V, RG=4.7Ω 2
Total Gate Charge Qg 67 nC VDS=56V, VGS=10V, IDS=40A 2
Gate-Source Charge Qgs 14 nC VDS=56V, VGS=10V, IDS=40A 2
Gate-Drain Charge Qgd 22 nC VDS=56V, VGS=10V, IDS=40A 2

CAD (KiCad official)

  • Symbol: RU7080L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ru7080l-etched.step / ru7080l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ru7080l.step / ru7080l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen ruichips Semicon datasheet (8 pp, sha256 8895b8f185a05599, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF