RU7080L from Shenzhen ruichips Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage limit is ±25 V with a typical threshold of 3 V (2 V min, 4 V max).
2	D	passive	Drain (also the tab); drain-source voltage is rated 70 V with 80 A continuous drain current at TC=25°C.
3	S	passive	Source; diode continuous forward current is 80 A at TC=25°C.

Key specifications

Parameter	Value
Manufacturer	Shenzhen ruichips Semicon
Package	TO-252
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			70	V	TC=25°C	1
Gate-Source Voltage	VGSS	-25		25	V	TC=25°C	1
Maximum Junction Temperature	TJ			175	°C		1
Storage Temperature Range	TSTG	-55		175	°C		1
Diode Continuous Forward Current	IS			80	A	TC=25°C	1
300µs Pulse Drain Current Tested	IDP			320	A	TC=25°C	1
Continuous Drain Current (VGS=10V)	ID			80	A	TC=25°C	1
Continuous Drain Current (VGS=10V)	ID			56	A	TC=100°C	1
Maximum Power Dissipation	PD			125	W	TC=25°C	1
Maximum Power Dissipation	PD			62.5	W	TC=100°C	1
Avalanche Energy, Single Pulsed	EAS			225	mJ	IAS=30A, VDD=48V, RG=50Ω, Starting TJ=25°C	1
Thermal Resistance Junction to Case	RθJC			1.2	°C/W		1
Thermal Resistance Junction to Ambient	RθJA			100	°C/W	Mounted on Large Heat Sink	1
Drain-Source Breakdown Voltage	BVDSS	70			V	VGS=0V, IDS=250µA	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS=70V, VGS=0V	2
Zero Gate Voltage Drain Current	IDSS			30	µA	VDS=70V, VGS=0V, TJ=125°C	2
Gate Threshold Voltage	VGS(th)	2	3	4	V	VDS=VGS, IDS=250µA	2
Gate Leakage Current	IGSS	-100		100	nA	VGS=±25V, VDS=0V	2
Drain-Source On-state Resistance	RDS(ON)		5.7	8	mΩ	VGS=10V, IDS=40A	2
Diode Forward Voltage	VSD			1.2	V	ISD=40A, VGS=0V	2
Reverse Recovery Time	trr		45		ns	ISD=40A, dISD/dt=100A/µs	2
Reverse Recovery Charge	Qrr		93		nC	ISD=40A, dISD/dt=100A/µs	2
Gate Resistance	RG		1.5		Ω	VGS=0V, VDS=0V, F=1MHz	2
Input Capacitance	Ciss		3450		pF	VGS=0V, VDS=35V, Frequency=1.0MHz	2
Output Capacitance	Coss		930		pF	VGS=0V, VDS=35V, Frequency=1.0MHz	2
Reverse Transfer Capacitance	Crss		230		pF	VGS=0V, VDS=35V, Frequency=1.0MHz	2
Turn-on Delay Time	td(ON)		40		ns	VDD=35V, IDS=40A, VGEN=10V, RG=4.7Ω	2
Turn-on Rise Time	tr		132		ns	VDD=35V, IDS=40A, VGEN=10V, RG=4.7Ω	2
Turn-off Delay Time	td(OFF)		180		ns	VDD=35V, IDS=40A, VGEN=10V, RG=4.7Ω	2
Turn-off Fall Time	tf		90		ns	VDD=35V, IDS=40A, VGEN=10V, RG=4.7Ω	2
Total Gate Charge	Qg		67		nC	VDS=56V, VGS=10V, IDS=40A	2
Gate-Source Charge	Qgs		14		nC	VDS=56V, VGS=10V, IDS=40A	2
Gate-Drain Charge	Qgd		22		nC	VDS=56V, VGS=10V, IDS=40A	2

CAD (KiCad official)

Symbol: RU7080L
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: ru7080l-etched.step / ru7080l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ru7080l.step / ru7080l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Shenzhen ruichips Semicon datasheet (8 pp, sha256 8895b8f185a05599, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

RU7080L

Verified RU7080L

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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