component
RU30C8H-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RU30C8H-VB
VBsemi Elec · MOSFETs · SO-8
RU30C8H-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | N-channel source terminal of the dual MOSFET, with N-channel drain-source voltage rated 30 V. |
| 2 | G1 | input | N-channel gate terminal, with gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | P-channel source terminal of the dual MOSFET, with P-channel drain-source voltage rated -30 V. |
| 4 | G2 | input | P-channel gate terminal, with gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | P-channel drain terminal, with drain-source voltage rated -30 V. |
| 6 | D2 | passive | P-channel drain terminal, with drain-source voltage rated -30 V. |
| 7 | D1 | passive | N-channel drain terminal, with drain-source voltage rated 30 V. |
| 8 | D1 | passive | N-channel drain terminal, with drain-source voltage rated 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage (N and P channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current TC=70 °C (N-Channel) | ID | 9.8 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current TC=70 °C (P-Channel) | ID | -8.8 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current TA=25 °C (N-Channel) | ID | 8.8 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current TA=25 °C (P-Channel) | ID | -7.6 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current TA=70 °C (N-Channel) | ID | 7.4 | A | TA = 70 °C | 1 | ||
| Continuous Drain Current TA=70 °C (P-Channel) | ID | -6.3 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 60 | A | 10 µs Pulse Width | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -60 | A | 10 µs Pulse Width | 1 | ||
| Continuous Source-Drain Diode Current TC=25 °C (N-Channel) | IS | 3.6 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current TC=25 °C (P-Channel) | IS | -3.6 | A | TC = 25 °C | 1 | ||
| Diode Current TA=25 °C (N-Channel) | IS | 1.6 | A | TA = 25 °C | 1 | ||
| Diode Current TA=25 °C (P-Channel) | IS | -1.6 | A | TA = 25 °C | 1 | ||
| Pulsed Source-Drain Current (N-Channel) | ISM | 60 | A | 1 | |||
| Pulsed Source-Drain Current (P-Channel) | ISM | -60 | A | 1 | |||
| Single Pulse Avalanche Current (N-Channel) | IAS | 20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current (P-Channel) | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 520 | mJ | 1 | |||
| Maximum Power Dissipation TC=25 °C (N-Channel) | PD | 6.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation TC=25 °C (P-Channel) | PD | 5.2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation TA=25 °C | PD | 3 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation TA=70 °C | PD | 2.28 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient t≤10 s (N-Channel) | RthJA | 20 | 32.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient t≤10 s (P-Channel) | RthJA | 27 | 32.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (Drain) Steady State (N-Channel) | RthJF | 10 | 20 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot (Drain) Steady State (P-Channel) | RthJF | 19 | 28 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage (N-Channel) | V(BR)DSS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | V(BR)DSS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| VDS Temperature Coefficient (P-Channel) | ΔVDS/TJ | -24 | mV/°C | ID = -250 µA | 2 | ||
| VGS(th) Temperature Coefficient (N-Channel) | ΔVGS(th)/TJ | -4.1 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient (P-Channel) | ΔVGS(th)/TJ | 5 | mV/°C | ID = -250 µA | 2 | ||
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 2.2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.9 | -2.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage (N and P channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current TJ=55 °C (N-Channel) | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current TJ=55 °C (P-Channel) | IDSS | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current (N-Channel) | ID(on) | 40 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-Channel) | ID(on) | -40 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.011 | Ω | VGS = 10 V, ID = 6.8 A | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.021 | Ω | VGS = -10 V, ID = -8 A | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.012 | Ω | VGS = 8 V, ID = 6.7 A | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.024 | Ω | VGS = -8 V, ID = -6.5 A | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.013 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.028 | Ω | VGS = -4.5 V, ID = -5 A | 2 | ||
| Forward Transconductance (N-Channel) | gfs | 37 | S | VDS = 15 V, ID = 6.8 A | 2 | ||
| Forward Transconductance (P-Channel) | gfs | 35 | S | VDS = -15 V, ID = -6.7 A | 2 | ||
| Input Capacitance (N-Channel) | Ciss | 1421 | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Input Capacitance (P-Channel) | Ciss | 1515 | pF | VDS = -20 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Total Gate Charge VGS=10 V (N-Channel) | Qg | 13.3 | 20 | nC | VDS = 20 V, VGS = 10 V, ID = 10 A | 2 | |
| Total Gate Charge VGS=-10 V (P-Channel) | Qg | 13 | 20 | nC | VDS = -20 V, VGS = -10 V, ID = -10 A | 2 | |
| Total Gate Charge VGS=4.5 V (N-Channel) | Qg | 6.5 | 10 | nC | VDS = 20 V, VGS = 4.5 V, ID = 10 A | 2 | |
| Total Gate Charge VGS=-4.5 V (P-Channel) | Qg | 21.7 | 33 | nC | VDS = -20 V, VGS = -4.5 V, ID = -10 A | 2 | |
| Gate Resistance (N-Channel) | Rg | 0.3 | 1.3 | 2.6 | Ω | f = 1 MHz | 2 |
| Gate Resistance (P-Channel) | Rg | 1.3 | 6.4 | 12.8 | Ω | f = 1 MHz | 2 |
| Diode Forward Voltage (N-Channel) | VSD | 0.81 | 1.2 | V | IS = 5.4 A | 3 | |
| Diode Forward Voltage (P-Channel) | VSD | -0.77 | -1.2 | V | IS = -2 A | 3 |
CAD (KiCad official)
- Symbol:
RU30C8H-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
ru30c8h-vb-etched.step/ru30c8h-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ru30c8h-vb.step/ru30c8h-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
6e85eea41e46045a, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RU30C8H-VB
**VBsemi Elec** · MOSFETs · SO-8
RU30C8H-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | N-channel source terminal of the dual MOSFET, with N-channel drain-source voltage rated 30 V. |
| 2 | G1 | input | N-channel gate terminal, with gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | P-channel source terminal of the dual MOSFET, with P-channel drain-source voltage rated -30 V. |
| 4 | G2 | input | P-channel gate terminal, with gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | P-channel drain terminal, with drain-source voltage rated -30 V. |
| 6 | D2 | passive | P-channel drain terminal, with drain-source voltage rated -30 V. |
| 7 | D1 | passive | N-channel drain terminal, with drain-source voltage rated 30 V. |
| 8 | D1 | passive | N-channel drain terminal, with drain-source voltage rated 30 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | | | 30 | V | | 1 |
| Drain-Source Voltage (P-Channel) | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage (N and P channel) | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current TC=70 °C (N-Channel) | ID | | | 9.8 | A | TC = 70 °C | 1 |
| Continuous Drain Current TC=70 °C (P-Channel) | ID | -8.8 | | | A | TC = 70 °C | 1 |
| Continuous Drain Current TA=25 °C (N-Channel) | ID | | | 8.8 | A | TA = 25 °C | 1 |
| Continuous Drain Current TA=25 °C (P-Channel) | ID | -7.6 | | | A | TA = 25 °C | 1 |
| Continuous Drain Current TA=70 °C (N-Channel) | ID | | | 7.4 | A | TA = 70 °C | 1 |
| Continuous Drain Current TA=70 °C (P-Channel) | ID | -6.3 | | | A | TA = 70 °C | 1 |
| Pulsed Drain Current (N-Channel) | IDM | | | 60 | A | 10 µs Pulse Width | 1 |
| Pulsed Drain Current (P-Channel) | IDM | -60 | | | A | 10 µs Pulse Width | 1 |
| Continuous Source-Drain Diode Current TC=25 °C (N-Channel) | IS | | | 3.6 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current TC=25 °C (P-Channel) | IS | -3.6 | | | A | TC = 25 °C | 1 |
| Diode Current TA=25 °C (N-Channel) | IS | | | 1.6 | A | TA = 25 °C | 1 |
| Diode Current TA=25 °C (P-Channel) | IS | -1.6 | | | A | TA = 25 °C | 1 |
| Pulsed Source-Drain Current (N-Channel) | ISM | | | 60 | A | | 1 |
| Pulsed Source-Drain Current (P-Channel) | ISM | -60 | | | A | | 1 |
| Single Pulse Avalanche Current (N-Channel) | IAS | | | 20 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Current (P-Channel) | IAS | -20 | | | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 520 | mJ | | 1 |
| Maximum Power Dissipation TC=25 °C (N-Channel) | PD | | | 6.1 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation TC=25 °C (P-Channel) | PD | | | 5.2 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation TA=25 °C | PD | | | 3 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation TA=70 °C | PD | | | 2.28 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient t≤10 s (N-Channel) | RthJA | | 20 | 32.5 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient t≤10 s (P-Channel) | RthJA | | 27 | 32.5 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Foot (Drain) Steady State (N-Channel) | RthJF | | 10 | 20 | °C/W | Steady State | 1 |
| Maximum Junction-to-Foot (Drain) Steady State (P-Channel) | RthJF | | 19 | 28 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage (N-Channel) | V(BR)DSS | 30 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | V(BR)DSS | -30 | | | V | VGS = 0 V, ID = -250 µA | 2 |
| VDS Temperature Coefficient (P-Channel) | ΔVDS/TJ | | -24 | | mV/°C | ID = -250 µA | 2 |
| VGS(th) Temperature Coefficient (N-Channel) | ΔVGS(th)/TJ | | -4.1 | | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient (P-Channel) | ΔVGS(th)/TJ | | 5 | | mV/°C | ID = -250 µA | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 2.2 | | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.9 | -2.5 | | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage (N and P channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | µA | VDS = -30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current TJ=55 °C (N-Channel) | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| Zero Gate Voltage Drain Current TJ=55 °C (P-Channel) | IDSS | | | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current (N-Channel) | ID(on) | 40 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| On-State Drain Current (P-Channel) | ID(on) | -40 | | | A | VDS = -5 V, VGS = -10 V | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.011 | | Ω | VGS = 10 V, ID = 6.8 A | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 0.021 | | Ω | VGS = -10 V, ID = -8 A | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.012 | | Ω | VGS = 8 V, ID = 6.7 A | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 0.024 | | Ω | VGS = -8 V, ID = -6.5 A | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.013 | | Ω | VGS = 4.5 V, ID = 6.6 A | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 0.028 | | Ω | VGS = -4.5 V, ID = -5 A | 2 |
| Forward Transconductance (N-Channel) | gfs | | 37 | | S | VDS = 15 V, ID = 6.8 A | 2 |
| Forward Transconductance (P-Channel) | gfs | | 35 | | S | VDS = -15 V, ID = -6.7 A | 2 |
| Input Capacitance (N-Channel) | Ciss | | 1421 | | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Input Capacitance (P-Channel) | Ciss | | 1515 | | pF | VDS = -20 V, VGS = 0 V, f = 1 MHz | 2 |
| Total Gate Charge VGS=10 V (N-Channel) | Qg | | 13.3 | 20 | nC | VDS = 20 V, VGS = 10 V, ID = 10 A | 2 |
| Total Gate Charge VGS=-10 V (P-Channel) | Qg | | 13 | 20 | nC | VDS = -20 V, VGS = -10 V, ID = -10 A | 2 |
| Total Gate Charge VGS=4.5 V (N-Channel) | Qg | | 6.5 | 10 | nC | VDS = 20 V, VGS = 4.5 V, ID = 10 A | 2 |
| Total Gate Charge VGS=-4.5 V (P-Channel) | Qg | | 21.7 | 33 | nC | VDS = -20 V, VGS = -4.5 V, ID = -10 A | 2 |
| Gate Resistance (N-Channel) | Rg | 0.3 | 1.3 | 2.6 | Ω | f = 1 MHz | 2 |
| Gate Resistance (P-Channel) | Rg | 1.3 | 6.4 | 12.8 | Ω | f = 1 MHz | 2 |
| Diode Forward Voltage (N-Channel) | VSD | | 0.81 | 1.2 | V | IS = 5.4 A | 3 |
| Diode Forward Voltage (P-Channel) | VSD | | -0.77 | -1.2 | V | IS = -2 A | 3 |
## CAD (KiCad official)
- Symbol: `RU30C8H-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `ru30c8h-vb-etched.step` / `ru30c8h-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ru30c8h-vb.step` / `ru30c8h-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/ru30c8h-vb-datasheet.pdf) (14 pp, sha256 `6e85eea41e46045a`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ru30c8h-vb-datasheet.pdf)