component

RU30C8H-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorru30c8h-vbfactory-2.0.0extractor-text

Verified RU30C8H-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: RU30C8H-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 14-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-78mt7fm9/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ru30c8h-vb.kicad_sym✓ ru30c8h-vb.kicad_mod✓ ru30c8h-vb.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers ru30c8h-vb: viewers · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
ru30c8h-vb-etched.glb Publish 0.1.0 · Ray 4d ago
ru30c8h-vb-etched.step ru30c8h-vb: factory component page (tier=lcsc) · Ray 4d ago
ru30c8h-vb-hero.glb ru30c8h-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
ru30c8h-vb-hero.overlay.json Publish 0.1.0 · Ray 4d ago
ru30c8h-vb.glb Publish 0.1.0 · Ray 4d ago
ru30c8h-vb.kicad_mod Publish 0.1.0 · Ray 4d ago
ru30c8h-vb.kicad_sym Publish 0.1.0 · Ray 4d ago
ru30c8h-vb.lbr Publish 0.1.0 · Ray 4d ago
ru30c8h-vb.step Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 4d ago

RU30C8H-VB

VBsemi Elec · MOSFETs · SO-8

RU30C8H-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive N-channel source terminal of the dual MOSFET, with N-channel drain-source voltage rated 30 V.
2 G1 input N-channel gate terminal, with gate-source voltage limited to ±20 V.
3 S2 passive P-channel source terminal of the dual MOSFET, with P-channel drain-source voltage rated -30 V.
4 G2 input P-channel gate terminal, with gate-source voltage limited to ±20 V.
5 D2 passive P-channel drain terminal, with drain-source voltage rated -30 V.
6 D2 passive P-channel drain terminal, with drain-source voltage rated -30 V.
7 D1 passive N-channel drain terminal, with drain-source voltage rated 30 V.
8 D1 passive N-channel drain terminal, with drain-source voltage rated 30 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 30 V 1
Drain-Source Voltage (P-Channel) VDS -30 V 1
Gate-Source Voltage (N and P channel) VGS -20 20 V 1
Continuous Drain Current TC=70 °C (N-Channel) ID 9.8 A TC = 70 °C 1
Continuous Drain Current TC=70 °C (P-Channel) ID -8.8 A TC = 70 °C 1
Continuous Drain Current TA=25 °C (N-Channel) ID 8.8 A TA = 25 °C 1
Continuous Drain Current TA=25 °C (P-Channel) ID -7.6 A TA = 25 °C 1
Continuous Drain Current TA=70 °C (N-Channel) ID 7.4 A TA = 70 °C 1
Continuous Drain Current TA=70 °C (P-Channel) ID -6.3 A TA = 70 °C 1
Pulsed Drain Current (N-Channel) IDM 60 A 10 µs Pulse Width 1
Pulsed Drain Current (P-Channel) IDM -60 A 10 µs Pulse Width 1
Continuous Source-Drain Diode Current TC=25 °C (N-Channel) IS 3.6 A TC = 25 °C 1
Continuous Source-Drain Diode Current TC=25 °C (P-Channel) IS -3.6 A TC = 25 °C 1
Diode Current TA=25 °C (N-Channel) IS 1.6 A TA = 25 °C 1
Diode Current TA=25 °C (P-Channel) IS -1.6 A TA = 25 °C 1
Pulsed Source-Drain Current (N-Channel) ISM 60 A 1
Pulsed Source-Drain Current (P-Channel) ISM -60 A 1
Single Pulse Avalanche Current (N-Channel) IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-Channel) IAS -20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 520 mJ 1
Maximum Power Dissipation TC=25 °C (N-Channel) PD 6.1 W TC = 25 °C 1
Maximum Power Dissipation TC=25 °C (P-Channel) PD 5.2 W TC = 25 °C 1
Maximum Power Dissipation TA=25 °C PD 3 W TA = 25 °C 1
Maximum Power Dissipation TA=70 °C PD 2.28 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient t≤10 s (N-Channel) RthJA 20 32.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient t≤10 s (P-Channel) RthJA 27 32.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Foot (Drain) Steady State (N-Channel) RthJF 10 20 °C/W Steady State 1
Maximum Junction-to-Foot (Drain) Steady State (P-Channel) RthJF 19 28 °C/W Steady State 1
Drain-Source Breakdown Voltage (N-Channel) V(BR)DSS 30 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage (P-Channel) V(BR)DSS -30 V VGS = 0 V, ID = -250 µA 2
VDS Temperature Coefficient (P-Channel) ΔVDS/TJ -24 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient (N-Channel) ΔVGS(th)/TJ -4.1 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient (P-Channel) ΔVGS(th)/TJ 5 mV/°C ID = -250 µA 2
Gate Threshold Voltage (N-Channel) VGS(th) 1 2.2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-Channel) VGS(th) -0.9 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage (N and P channel) IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current TJ=55 °C (N-Channel) IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current TJ=55 °C (P-Channel) IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current (N-Channel) ID(on) 40 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current (P-Channel) ID(on) -40 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.011 Ω VGS = 10 V, ID = 6.8 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.021 Ω VGS = -10 V, ID = -8 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.012 Ω VGS = 8 V, ID = 6.7 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.024 Ω VGS = -8 V, ID = -6.5 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.013 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.028 Ω VGS = -4.5 V, ID = -5 A 2
Forward Transconductance (N-Channel) gfs 37 S VDS = 15 V, ID = 6.8 A 2
Forward Transconductance (P-Channel) gfs 35 S VDS = -15 V, ID = -6.7 A 2
Input Capacitance (N-Channel) Ciss 1421 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Input Capacitance (P-Channel) Ciss 1515 pF VDS = -20 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge VGS=10 V (N-Channel) Qg 13.3 20 nC VDS = 20 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge VGS=-10 V (P-Channel) Qg 13 20 nC VDS = -20 V, VGS = -10 V, ID = -10 A 2
Total Gate Charge VGS=4.5 V (N-Channel) Qg 6.5 10 nC VDS = 20 V, VGS = 4.5 V, ID = 10 A 2
Total Gate Charge VGS=-4.5 V (P-Channel) Qg 21.7 33 nC VDS = -20 V, VGS = -4.5 V, ID = -10 A 2
Gate Resistance (N-Channel) Rg 0.3 1.3 2.6 Ω f = 1 MHz 2
Gate Resistance (P-Channel) Rg 1.3 6.4 12.8 Ω f = 1 MHz 2
Diode Forward Voltage (N-Channel) VSD 0.81 1.2 V IS = 5.4 A 3
Diode Forward Voltage (P-Channel) VSD -0.77 -1.2 V IS = -2 A 3

CAD (KiCad official)

  • Symbol: RU30C8H-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ru30c8h-vb-etched.step / ru30c8h-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ru30c8h-vb.step / ru30c8h-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 6e85eea41e46045a, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF