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RU3070L

Public Made by Adom

by adom

Shenzhen ruichips Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RU3070L

Shenzhen ruichips Semicon · MOSFETs · TO-252

RU3070L from Shenzhen ruichips Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold voltage 1 V min to 3 V max at IDS=250µA.
2 D passive Drain (middle lead and exposed tab, shown as D in the package drawing); VDSS 30 V, continuous drain current 70 A at TC=25°C.
3 S passive Source; diode continuous forward current 70 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Shenzhen ruichips Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Maximum Junction Temperature TJ 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Continuous Drain Current ID 70 A TC=25°C; VGS=10V 1
Continuous Drain Current ID 49 A TC=100°C; VGS=10V 1
Maximum Power Dissipation PD 71 W TC=25°C; mounted on large heat sink 1
Maximum Power Dissipation PD 36 W TC=100°C; mounted on large heat sink 1
Diode Continuous Forward Current IS 70 A TC=25°C 1
300μs Pulse Drain Current Tested IDP 280 A TC=25°C; pulse width limited by SOA (note ①) 1
Avalanche Energy, Single Pulsed EAS 196 mJ Note ③: IAS=28A, VDD=24V, RG=50Ω, starting TJ=25°C 1
Thermal Resistance-Junction to Case RθJC 2.1 °C/W 1
Thermal Resistance-Junction to Ambient RθJA 100 °C/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250µA 2
Gate Threshold Voltage VGS(th) 1 3 V VDS=VGS, IDS=250µA 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 3.3 4.3 mΩ VGS=10V, IDS=70A 2
Drain-Source On-state Resistance RDS(ON) 5 6 mΩ VGS=4.5V, IDS=56A 2
Diode Forward Voltage VSD 1.2 V ISD=70A, VGS=0V 2
Reverse Recovery Time trr 35 ns ISD=70A, dISD/dt=100A/µs 2
Reverse Recovery Charge Qrr 23 nC ISD=70A, dISD/dt=100A/µs 2
Gate Resistance RG 1.9 Ω VGS=0V, VDS=0V, F=1MHz 2
Input Capacitance Ciss 2200 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Output Capacitance Coss 370 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Reverse Transfer Capacitance Crss 250 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Turn-on Delay Time td(ON) 7 ns VDD=15V, IDS=70A, VGEN=10V, RG=5Ω 2
Turn-on Rise Time tr 12 ns VDD=15V, IDS=70A, VGEN=10V, RG=5Ω 2
Turn-off Delay Time td(OFF) 28 ns VDD=15V, IDS=70A, VGEN=10V, RG=5Ω 2
Turn-off Fall Time tf 11 ns VDD=15V, IDS=70A, VGEN=10V, RG=5Ω 2
Total Gate Charge Qg 32 nC VDS=24V, VGS=10V, IDS=70A 2
Gate-Source Charge Qgs 5 nC VDS=24V, VGS=10V, IDS=70A 2
Gate-Drain Charge Qgd 10 nC VDS=24V, VGS=10V, IDS=70A 2

CAD (KiCad official)

  • Symbol: RU3070L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ru3070l-etched.step / ru3070l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ru3070l.step / ru3070l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen ruichips Semicon datasheet (8 pp, sha256 0dc57fd488e5a7dd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF