component
RU3070L
Public Made by Adomby adom
Shenzhen ruichips Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| ru3070l-etched.glb | 23d ago |
| ru3070l-etched.step | 23d ago |
| ru3070l-hero.glb | 23d ago |
| ru3070l-hero.overlay.json | 23d ago |
| ru3070l.glb | 23d ago |
| ru3070l.kicad_mod | 23d ago |
| ru3070l.kicad_sym | 23d ago |
| ru3070l.lbr | 23d ago |
| ru3070l.step | 23d ago |
RU3070L
Shenzhen ruichips Semicon · MOSFETs · TO-252
RU3070L from Shenzhen ruichips Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold voltage 1 V min to 3 V max at IDS=250µA. |
| 2 | D | passive | Drain (middle lead and exposed tab, shown as D in the package drawing); VDSS 30 V, continuous drain current 70 A at TC=25°C. |
| 3 | S | passive | Source; diode continuous forward current 70 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen ruichips Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Maximum Junction Temperature | TJ | 175 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 1 | ||
| Continuous Drain Current | ID | 70 | A | TC=25°C; VGS=10V | 1 | ||
| Continuous Drain Current | ID | 49 | A | TC=100°C; VGS=10V | 1 | ||
| Maximum Power Dissipation | PD | 71 | W | TC=25°C; mounted on large heat sink | 1 | ||
| Maximum Power Dissipation | PD | 36 | W | TC=100°C; mounted on large heat sink | 1 | ||
| Diode Continuous Forward Current | IS | 70 | A | TC=25°C | 1 | ||
| 300μs Pulse Drain Current Tested | IDP | 280 | A | TC=25°C; pulse width limited by SOA (note ①) | 1 | ||
| Avalanche Energy, Single Pulsed | EAS | 196 | mJ | Note ③: IAS=28A, VDD=24V, RG=50Ω, starting TJ=25°C | 1 | ||
| Thermal Resistance-Junction to Case | RθJC | 2.1 | °C/W | 1 | |||
| Thermal Resistance-Junction to Ambient | RθJA | 100 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, IDS=250µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, IDS=250µA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 3.3 | 4.3 | mΩ | VGS=10V, IDS=70A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 5 | 6 | mΩ | VGS=4.5V, IDS=56A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | ISD=70A, VGS=0V | 2 | ||
| Reverse Recovery Time | trr | 35 | ns | ISD=70A, dISD/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 23 | nC | ISD=70A, dISD/dt=100A/µs | 2 | ||
| Gate Resistance | RG | 1.9 | Ω | VGS=0V, VDS=0V, F=1MHz | 2 | ||
| Input Capacitance | Ciss | 2200 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | ||
| Output Capacitance | Coss | 370 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 250 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 7 | ns | VDD=15V, IDS=70A, VGEN=10V, RG=5Ω | 2 | ||
| Turn-on Rise Time | tr | 12 | ns | VDD=15V, IDS=70A, VGEN=10V, RG=5Ω | 2 | ||
| Turn-off Delay Time | td(OFF) | 28 | ns | VDD=15V, IDS=70A, VGEN=10V, RG=5Ω | 2 | ||
| Turn-off Fall Time | tf | 11 | ns | VDD=15V, IDS=70A, VGEN=10V, RG=5Ω | 2 | ||
| Total Gate Charge | Qg | 32 | nC | VDS=24V, VGS=10V, IDS=70A | 2 | ||
| Gate-Source Charge | Qgs | 5 | nC | VDS=24V, VGS=10V, IDS=70A | 2 | ||
| Gate-Drain Charge | Qgd | 10 | nC | VDS=24V, VGS=10V, IDS=70A | 2 |
CAD (KiCad official)
- Symbol:
RU3070L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ru3070l-etched.step/ru3070l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ru3070l.step/ru3070l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen ruichips Semicon datasheet (8 pp, sha256
0dc57fd488e5a7dd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).