# RU3020H

**Shenzhen ruichips Semicon** · MOSFETs · SOP-8

RU3020H from Shenzhen ruichips Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage rated ±20 V, with RDS(ON) specified at VGS=10 V and 4.5 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied with pins 6, 7 and 8; VDSS 30 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 7 and 8; VDSS 30 V. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 8; VDSS 30 V. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 7; VDSS 30 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen ruichips Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 30 | V | TA=25°C unless otherwise noted | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V | TA=25°C unless otherwise noted | 1 |
| Maximum Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Diode Continuous Forward Current | IS |  |  | 12 | A | TC=25°C, mounted on large heat sink | 1 |
| 300μs Pulse Drain Current Tested | IDP |  |  | 48 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 12 | A | VGS=10V, TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 9.6 | A | VGS=10V, TC=70°C | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | TC=25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TC=70°C | 1 |
| Avalanche Energy, Single Pulsed | EAS |  |  | 105 | mJ | Limited by TJmax, IAS=20A, VDD=48V, RG=50Ω, starting TJ=25°C (note 3) | 1 |
| Thermal Resistance-Junction to Ambient | RJA |  |  | 50 | °C/W | Mounted on 1 inch square copper board, t 10sec (note 2) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, IDS=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 30 | μA | VDS=30V, VGS=0V, TJ=85°C | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 2.5 | V | VDS=VGS, IDS=250μA | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 9.5 | 15 | mΩ | VGS=10V, IDS=10A | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 15 | 21 | mΩ | VGS=4.5V, IDS=8A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | ISD=12A, VGS=0V | 2 |
| Total Gate Charge | Qg |  | 19 | 25 | nC | VDS=15V, VGS=10V, IDS=12A | 2 |
| Reverse Recovery Time | trr |  | 20 |  | ns | ISD=12A, dlSD/dt=100A/μs | 2 |
| Reverse Recovery Charge | Qrr |  | 12 |  | nC | ISD=12A, dlSD/dt=100A/μs | 2 |
| Gate Resistance | RG |  | 1.2 |  | Ω | VGS=0V, VDS=0V, F=1MHz | 2 |
| Input Capacitance | Ciss |  | 980 |  | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 |
| Output Capacitance | Coss |  | 160 |  | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 120 |  | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 |
| Turn-on Delay Time | td(ON) |  | 12 |  | ns | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 2 |
| Turn-on Rise Time | tr |  | 19 |  | ns | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 2 |
| Turn-off Delay Time | td(OFF) |  | 34 |  | ns | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 2 |
| Turn-off Fall Time | tf |  | 16 |  | ns | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 2 |
| Gate-Source Charge | Qgs |  | 3 |  | nC | VDS=15V, VGS=10V, IDS=12A | 2 |
| Gate-Drain Charge | Qgd |  | 7 |  | nC | VDS=15V, VGS=10V, IDS=12A | 2 |

## CAD (KiCad official)

- Symbol: `RU3020H`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ru3020h-etched.step` / `ru3020h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ru3020h.step` / `ru3020h.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shenzhen ruichips Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881133672652800) (9 pp, sha256 `370896a6f77b862c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ru3020h-datasheet.pdf)