component
RU3020H
Public Made by Adomby adom
Shenzhen ruichips Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| ru3020h-etched.glb | 17d ago |
| ru3020h-etched.step | 17d ago |
| ru3020h-hero.glb | 17d ago |
| ru3020h-hero.overlay.json | 17d ago |
| ru3020h.glb | 17d ago |
| ru3020h.kicad_mod | 17d ago |
| ru3020h.kicad_sym | 17d ago |
| ru3020h.lbr | 17d ago |
| ru3020h.step | 17d ago |
RU3020H
Shenzhen ruichips Semicon · MOSFETs · SOP-8
RU3020H from Shenzhen ruichips Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage rated ±20 V, with RDS(ON) specified at VGS=10 V and 4.5 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied with pins 6, 7 and 8; VDSS 30 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 7 and 8; VDSS 30 V. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 8; VDSS 30 V. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 7; VDSS 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen ruichips Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA=25°C unless otherwise noted | 1 | |
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Diode Continuous Forward Current | IS | 12 | A | TC=25°C, mounted on large heat sink | 1 | ||
| 300μs Pulse Drain Current Tested | IDP | 48 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 12 | A | VGS=10V, TC=25°C | 1 | ||
| Continuous Drain Current | ID | 9.6 | A | VGS=10V, TC=70°C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TC=25°C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC=70°C | 1 | ||
| Avalanche Energy, Single Pulsed | EAS | 105 | mJ | Limited by TJmax, IAS=20A, VDD=48V, RG=50Ω, starting TJ=25°C (note 3) | 1 | ||
| Thermal Resistance-Junction to Ambient | RJA | 50 | °C/W | Mounted on 1 inch square copper board, t 10sec (note 2) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, IDS=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | μA | VDS=30V, VGS=0V, TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, IDS=250μA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 9.5 | 15 | mΩ | VGS=10V, IDS=10A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 15 | 21 | mΩ | VGS=4.5V, IDS=8A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | ISD=12A, VGS=0V | 2 | ||
| Total Gate Charge | Qg | 19 | 25 | nC | VDS=15V, VGS=10V, IDS=12A | 2 | |
| Reverse Recovery Time | trr | 20 | ns | ISD=12A, dlSD/dt=100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 12 | nC | ISD=12A, dlSD/dt=100A/μs | 2 | ||
| Gate Resistance | RG | 1.2 | Ω | VGS=0V, VDS=0V, F=1MHz | 2 | ||
| Input Capacitance | Ciss | 980 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | ||
| Output Capacitance | Coss | 160 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 120 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 12 | ns | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 2 | ||
| Turn-on Rise Time | tr | 19 | ns | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 2 | ||
| Turn-off Delay Time | td(OFF) | 34 | ns | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 2 | ||
| Turn-off Fall Time | tf | 16 | ns | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 2 | ||
| Gate-Source Charge | Qgs | 3 | nC | VDS=15V, VGS=10V, IDS=12A | 2 | ||
| Gate-Drain Charge | Qgd | 7 | nC | VDS=15V, VGS=10V, IDS=12A | 2 |
CAD (KiCad official)
- Symbol:
RU3020H - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ru3020h-etched.step/ru3020h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ru3020h.step/ru3020h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen ruichips Semicon datasheet (9 pp, sha256
370896a6f77b862c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).