# RT8082GQW

**Richtek Tech** · DC-DC Converters · WDFN-12-EP(3x3)

RT8082GQW from Richtek Tech, in a WDFN-12-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | LX | output | Internal power MOSFET switch output; connect to the inductor (pin 12 is also LX and the two must be tied together). |
| 2 | VIN | power_in | Power input; decouple to GND with two 10µF capacitors (pin 11 is also VIN). |
| 3 | PGND | power_in | Power ground; the exposed pad (pin 13) must be soldered to a large PCB and connected to ground for maximum power dissipation. |
| 4 | AGND | power_in | Analog ground providing the return path for the control circuit and internal reference. |
| 5 | BIAS | power_in | Analog power input; decouple to AGND with a minimum 0.1µF ceramic capacitor. |
| 6 | FB | input | Feedback input that sets the output voltage through an external resistive divider; feedback reference is 1V typical. |
| 7 | NC | unconnected | No internal connection. |
| 8 | EN | input | Enable control input; floating or driving logic high enables the device, and driving logic low disables it. |
| 9 | PGOOD | output | Open-drain power good indicator, pulled to ground when the output voltage is within 7% of the regulation point; requires an external pull-up. |
| 10 | PGND | power_in | Power ground, one of the PGND pins (3, 10, 13) of the device. |
| 11 | VIN | power_in | Power input; decouple to GND with two 10µF capacitors (pin 2 is also VIN). |
| 12 | LX | output | Internal power MOSFET switch output; connect to the inductor together with pin 1. |
| 13 | PGND | power_in | Exposed pad, power ground; must be soldered to a large PCB and connected to ground for maximum power dissipation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Richtek Tech |
| Package | WDFN-12-EP(3x3) |
| Category | Power Management (PMIC) |
| Pins | 13 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Input Voltage | VIN | 2.7 |  | 5.5 | V |  | 4 |
| Junction Temperature Range | TJ | -40 |  | 125 | °C |  | 4 |
| Ambient Temperature Range | TA | -40 |  | 85 | °C |  | 4 |
| Supply Input Voltage VIN, BIAS | VIN, BIAS | -0.3 |  | 6 | V |  | 4 |
| LX Pin Switch Voltage |  | -0.3 |  | 6.3 | V |  | 4 |
| LX Pin Switch Voltage |  | -4.5 |  | 7.5 | V | <20ns | 4 |
| Other Pins Voltage |  | -0.3 |  | 6.3 | V |  | 4 |
| LX Pin Switch Current |  |  |  | 5 | A |  | 4 |
| Power Dissipation PD | PD |  |  | 1.667 | W | TA = 25°C, WDFN-12EL 3x3 | 4 |
| Package Thermal Resistance junction-to-ambient | θJA |  | 60 |  | °C/W | WDFN-12EL 3x3 | 4 |
| Package Thermal Resistance junction-to-case | θJC |  | 7 |  | °C/W | WDFN-12EL 3x3 | 4 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 4 |
| Lead Temperature (Soldering) |  |  |  | 260 | °C | 10 sec soldering | 4 |
| Storage Temperature Range | TSTG | -65 |  | 150 | °C |  | 4 |
| ESD Susceptibility HBM |  |  |  | 2 | kV | HBM (Human Body Model) | 4 |
| Quiescent Current | IQ |  | 570 | 900 | µA | VFB = 0.9V, Not Switching | 4 |
| Shutdown Current | ISHDN |  | 1 | 2 | µA | VEN = 0V | 4 |
| Feedback Voltage | VFB | 0.98 | 1 | 1.02 | V | ILOAD = 100mA | 4 |
| Feedback Voltage | VFB | 0.99 | 1 | 1.01 | V | ILOAD = 100mA, TA = 25C | 4 |
| Load Regulation |  |  | 0.2 | 0.5 | % | 20mA < ILOAD < 3A | 4 |
| Switching Frequency | fOSC | 1.7 | 2 | 2.3 | MHz |  | 4 |
| High Side Switch On-Resistance | RDS(ON)_P |  | 75 | 150 | mΩ |  | 4 |
| Low Side Switch On-Resistance | RDS(ON)_N |  | 55 | 80 | mΩ | ILX = 0.5A | 4 |
| Peak Current Limit | ILIM | 3.5 | 5 |  | A |  | 4 |
| Under Voltage Lockout Threshold | VUVLO | 2.35 | 2.45 | 2.6 | V | VIN Rising | 4 |
| Power Good Resistance |  |  | 145 | 250 | Ω | IPGOOD = 500µA | 5 |
| Enable Threshold Voltage |  | 0.5 | 0.85 | 1.3 | V | EN Rising | 5 |
| Enable Input Current |  |  | 0.1 | 2 | µA |  | 5 |

## CAD (KiCad official)

- Symbol: `RT8082GQW`
- Footprint: `Package_DFN_QFN:WDFN-12-1EP_3x3mm_P0.45mm_EP1.7x2.5mm`
- 3D model: WDFN-12-EP(3x3) (KiCad packages3D, STEP)
- 3D model files: `rt8082gqw-etched.step` / `rt8082gqw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rt8082gqw.step` / `rt8082gqw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Richtek Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590234526405189633) (14 pp, sha256 `407e895b9b1f6426`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rt8082gqw-datasheet.pdf)