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RSU2N65D

REASUNOS · MOSFETs · TO-252

RSU2N65D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) 3 to 4 V at ID=250µA and an absolute maximum of ±30 V.
2 D passive Drain, also the exposed tab; VDSS 650 V, continuous 1.8 A at TC=25℃, pulsed 5.4 A.
3 S passive Source; continuous body-diode current IS 1.8 A, pulsed 5.4 A, VSD max 1.3 V.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 650 V 1
Continuous Drain Current ID 1.8 A TC=25℃ 1
Pulsed Drain Current IDM 5.4 A Repetitive rating, pulse width limited by maximum junction temperature (Note*1) 1
Power Dissipation PD 22 W 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 40 mJ L = 10mH, VDD = 50V, RG = 25 Ω 1
Maximum Temperature for Soldering, Leads at 0.063in(1.6mm) from Case for 10 seconds TL 300 ℃ Leads at 0.063in(1.6mm) from case for 10 seconds 1
Maximum Temperature for Soldering, Package Body for 10 seconds TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Drain-to-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=650V, VGS=0 2
Gate-to-Source Forward Leakage Current IGSS 100 nA VGS=30V, VDS=0V 2
Gate-to-Source Reverse Leakage Current IGSS -100 nA VGS=-30V, VDS=0 2
Static Drain-to-Source On-Resistance (Note*2) RDS(on) 2.2 2.4 Ω VGS=10V, ID=1A 2
Gate Threshold Voltage VGS(TH) 3 4 V VGS=VDS, ID=250µA 2
Continuous Source Current (Integral pn-diode in MOSFET) IS 1.8 A 3
Maximum Pulsed Current (Integral pn-diode in MOSFET) ISM 5.4 A 3
Diode Forward Voltage VSD 1.3 V IS=1.8A, VGS=0V 3
Junction-to-Case Thermal Resistance RθJC 5.68 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 75 ℃/W 1 cubic foot chamber, free air 2

CAD (KiCad official)

  • Symbol: RSU2N65D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rsu2n65d-etched.step / rsu2n65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rsu2n65d.step / rsu2n65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (8 pp, sha256 a05c6c9a14b68439, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF