component
RSU2N65D
Public Made by Adomby adom
REASUNOS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRSU2N65D
REASUNOS · MOSFETs · TO-252
RSU2N65D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(th) 3 to 4 V at ID=250µA and an absolute maximum of ±30 V. |
| 2 | D | passive | Drain, also the exposed tab; VDSS 650 V, continuous 1.8 A at TC=25℃, pulsed 5.4 A. |
| 3 | S | passive | Source; continuous body-diode current IS 1.8 A, pulsed 5.4 A, VSD max 1.3 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 650 | V | 1 | |||
| Continuous Drain Current | ID | 1.8 | A | TC=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 5.4 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note*1) | 1 | ||
| Power Dissipation | PD | 22 | W | 1 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 40 | mJ | L = 10mH, VDD = 50V, RG = 25 Ω | 1 | ||
| Maximum Temperature for Soldering, Leads at 0.063in(1.6mm) from Case for 10 seconds | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering, Package Body for 10 seconds | TPKG | 260 | ℃ | Package body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0 | 2 | ||
| Gate-to-Source Forward Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage Current | IGSS | -100 | nA | VGS=-30V, VDS=0 | 2 | ||
| Static Drain-to-Source On-Resistance (Note*2) | RDS(on) | 2.2 | 2.4 | Ω | VGS=10V, ID=1A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 3 | 4 | V | VGS=VDS, ID=250µA | 2 | |
| Continuous Source Current (Integral pn-diode in MOSFET) | IS | 1.8 | A | 3 | |||
| Maximum Pulsed Current (Integral pn-diode in MOSFET) | ISM | 5.4 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.3 | V | IS=1.8A, VGS=0V | 3 | ||
| Junction-to-Case Thermal Resistance | RθJC | 5.68 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 75 | ℃/W | 1 cubic foot chamber, free air | 2 |
CAD (KiCad official)
- Symbol:
RSU2N65D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rsu2n65d-etched.step/rsu2n65d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rsu2n65d.step/rsu2n65d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (8 pp, sha256
a05c6c9a14b68439, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).