# RSM1701K0W

**REASUNOS** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

RSM1701K0W from REASUNOS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate drive input; absolute maximum VGS is -10/+25 V, recommended operating range is -5/+20 V, with 22 Ω typical internal gate resistance. |
| 2 | D | passive | Drain terminal (also connected to the mounting tab); rated for 1700 V VDS and 5 A continuous at TC=25℃ (3.5 A at 100℃). |
| 3 | S | passive | Source terminal and power return; carries the continuous drain current of 5 A at TC=25℃ and the body-diode current (IS 4 A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source Voltage | VDSmax |  |  | 1700 | V | VGS=0V,ID =100μA | 1 |
| Gate - Source Voltage | VGSmax | -10 |  | 25 | V | Absolute maximum values | 1 |
| Gate - Source Voltage (recommended operational) | VGSop | -5 |  | 20 | V | Recommended operational values | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | VGS=20V, TC =25℃ | 1 |
| Continuous Drain Current | ID |  |  | 3.5 | A | VGS=20V, TC =100℃ | 1 |
| Pulsed Drain Current | ID(pulse) |  |  | 6 | A | Pulse width tp limited by TJmax | 1 |
| Power Dissipation | PD |  |  | 69 | W | TC =25℃, TJ =150℃ | 1 |
| Solder Temperature | TL |  |  | 260 | ℃ |  | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -40 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1700 |  |  | V | VGS=0V,ID =100μA | 2 |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3 | 4.5 | V | VGS= VDS, IDS=1mA, TC =25℃ | 2 |
| Gate Threshold Voltage | VGS(th) | 2.2 |  |  | V | VGS= VDS, IDS=1mA, TC =150℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 | 100 | μA | VDS= 1700V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS |  |  | 250 | nA | VGS=25V, VDS= 0V | 2 |
| Drain-Source on-state Resistance | RDS(on) |  | 1000 | 1300 | mΩ | VGS=20V, ID =2A, TC =25℃ | 2 |
| Drain-Source on-state Resistance | RDS(on) |  |  | 1500 | mΩ | VGS=20V, ID =2A, TC =150℃ | 2 |
| Diode Forward Voltage | VSD |  |  | 4.2 | V | VGS=-5V, ISD = 1 A, TJ = 25℃ | 3 |
| Diode Forward Voltage | VSD |  |  | 3.9 | V | VGS=-5V, ISD= 1 A, TJ= 150℃ | 3 |
| Continuous Diode Forward Current | IS |  |  | 4 | A | VGS=-5V,TC= 25℃ | 3 |
| Thermal Resistance from Junction to Case | RθJC |  | 1.8 |  | ℃/W |  | 3 |
| Thermal Resistance From Junction to Ambient | RθJA |  | 40 |  | ℃/W |  | 3 |

## CAD (KiCad official)

- Symbol: `RSM1701K0W`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `rsm1701k0w-etched.step` / `rsm1701k0w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rsm1701k0w.step` / `rsm1701k0w.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [REASUNOS datasheet](docs/rsm1701k0w-datasheet.pdf) (8 pp, sha256 `4465f98d3f8d362f`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rsm1701k0w-datasheet.pdf)