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RSM1701K0W

REASUNOS · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

RSM1701K0W from REASUNOS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate drive input; absolute maximum VGS is -10/+25 V, recommended operating range is -5/+20 V, with 22 Ω typical internal gate resistance.
2 D passive Drain terminal (also connected to the mounting tab); rated for 1700 V VDS and 5 A continuous at TC=25℃ (3.5 A at 100℃).
3 S passive Source terminal and power return; carries the continuous drain current of 5 A at TC=25℃ and the body-diode current (IS 4 A).

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source Voltage VDSmax 1700 V VGS=0V,ID =100μA 1
Gate - Source Voltage VGSmax -10 25 V Absolute maximum values 1
Gate - Source Voltage (recommended operational) VGSop -5 20 V Recommended operational values 1
Continuous Drain Current ID 5 A VGS=20V, TC =25℃ 1
Continuous Drain Current ID 3.5 A VGS=20V, TC =100℃ 1
Pulsed Drain Current ID(pulse) 6 A Pulse width tp limited by TJmax 1
Power Dissipation PD 69 W TC =25℃, TJ =150℃ 1
Solder Temperature TL 260 ℃ 1
Operating Junction and Storage Temperature TJ, Tstg -40 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 1700 V VGS=0V,ID =100μA 2
Gate Threshold Voltage VGS(th) 2.5 3 4.5 V VGS= VDS, IDS=1mA, TC =25℃ 2
Gate Threshold Voltage VGS(th) 2.2 V VGS= VDS, IDS=1mA, TC =150℃ 2
Zero Gate Voltage Drain Current IDSS 1 100 μA VDS= 1700V, VGS=0V 2
Gate-Source Leakage Current IGSS 250 nA VGS=25V, VDS= 0V 2
Drain-Source on-state Resistance RDS(on) 1000 1300 mΩ VGS=20V, ID =2A, TC =25℃ 2
Drain-Source on-state Resistance RDS(on) 1500 mΩ VGS=20V, ID =2A, TC =150℃ 2
Diode Forward Voltage VSD 4.2 V VGS=-5V, ISD = 1 A, TJ = 25℃ 3
Diode Forward Voltage VSD 3.9 V VGS=-5V, ISD= 1 A, TJ= 150℃ 3
Continuous Diode Forward Current IS 4 A VGS=-5V,TC= 25℃ 3
Thermal Resistance from Junction to Case RθJC 1.8 ℃/W 3
Thermal Resistance From Junction to Ambient RθJA 40 ℃/W 3

CAD (KiCad official)

  • Symbol: RSM1701K0W
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: rsm1701k0w-etched.step / rsm1701k0w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rsm1701k0w.step / rsm1701k0w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (8 pp, sha256 4465f98d3f8d362f, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF