component
RSM1701K0W
Public Made by Adomby adom
REASUNOS Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
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| README.md | 6d ago |
| rsm1701k0w-etched.glb | 6d ago |
| rsm1701k0w-etched.step | 6d ago |
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RSM1701K0W
REASUNOS · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
RSM1701K0W from REASUNOS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate drive input; absolute maximum VGS is -10/+25 V, recommended operating range is -5/+20 V, with 22 Ω typical internal gate resistance. |
| 2 | D | passive | Drain terminal (also connected to the mounting tab); rated for 1700 V VDS and 5 A continuous at TC=25℃ (3.5 A at 100℃). |
| 3 | S | passive | Source terminal and power return; carries the continuous drain current of 5 A at TC=25℃ and the body-diode current (IS 4 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source Voltage | VDSmax | 1700 | V | VGS=0V,ID =100μA | 1 | ||
| Gate - Source Voltage | VGSmax | -10 | 25 | V | Absolute maximum values | 1 | |
| Gate - Source Voltage (recommended operational) | VGSop | -5 | 20 | V | Recommended operational values | 1 | |
| Continuous Drain Current | ID | 5 | A | VGS=20V, TC =25℃ | 1 | ||
| Continuous Drain Current | ID | 3.5 | A | VGS=20V, TC =100℃ | 1 | ||
| Pulsed Drain Current | ID(pulse) | 6 | A | Pulse width tp limited by TJmax | 1 | ||
| Power Dissipation | PD | 69 | W | TC =25℃, TJ =150℃ | 1 | ||
| Solder Temperature | TL | 260 | ℃ | 1 | |||
| Operating Junction and Storage Temperature | TJ, Tstg | -40 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1700 | V | VGS=0V,ID =100μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 3 | 4.5 | V | VGS= VDS, IDS=1mA, TC =25℃ | 2 |
| Gate Threshold Voltage | VGS(th) | 2.2 | V | VGS= VDS, IDS=1mA, TC =150℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 100 | μA | VDS= 1700V, VGS=0V | 2 | |
| Gate-Source Leakage Current | IGSS | 250 | nA | VGS=25V, VDS= 0V | 2 | ||
| Drain-Source on-state Resistance | RDS(on) | 1000 | 1300 | mΩ | VGS=20V, ID =2A, TC =25℃ | 2 | |
| Drain-Source on-state Resistance | RDS(on) | 1500 | mΩ | VGS=20V, ID =2A, TC =150℃ | 2 | ||
| Diode Forward Voltage | VSD | 4.2 | V | VGS=-5V, ISD = 1 A, TJ = 25℃ | 3 | ||
| Diode Forward Voltage | VSD | 3.9 | V | VGS=-5V, ISD= 1 A, TJ= 150℃ | 3 | ||
| Continuous Diode Forward Current | IS | 4 | A | VGS=-5V,TC= 25℃ | 3 | ||
| Thermal Resistance from Junction to Case | RθJC | 1.8 | ℃/W | 3 | |||
| Thermal Resistance From Junction to Ambient | RθJA | 40 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
RSM1701K0W - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
rsm1701k0w-etched.step/rsm1701k0w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rsm1701k0w.step/rsm1701k0w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (8 pp, sha256
4465f98d3f8d362f, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).