component
RSM120040W
Public Made by Adomby adom
REASUNOS Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "rsm120040w",
"title": "RSM120040W",
"brief": "REASUNOS Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"silicon carbide (sic) devices",
"rsm120040w",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "RSM120040W",
"manufacturer": "REASUNOS",
"package": "TO-247-3",
"pin_count": 3,
"category": "Silicon Carbide (SiC) Devices",
"subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/bcd8803c25abdbb36648116c823c0ae0.pdf",
"parts": {
"symbol": "rsm120040w.kicad_sym",
"footprint": "rsm120040w.kicad_mod",
"model_3d": "rsm120040w-hero.glb",
"model_3d_plain": "rsm120040w-etched.glb",
"model_3d_step": "rsm120040w-etched.step",
"model_3d_step_plain": "rsm120040w.step",
"lbr": "rsm120040w.lbr"
},
"distributor_links": {
"lcsc": "C5371982"
},
"distributor_check": {
"checked_at": "2026-10-29T01:46:04Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate drive input; absolute maximum VGS is -8/+22 V and recommended operating VGS is -4/+18 V, with 4.9 Ω typical internal gate resistance."
},
{
"number": "2",
"name": "D",
"type": "passive",
"description": "Drain terminal, rated for VDS up to 1200 V and 68 A continuous at TC=25°C (100 A pulsed)."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source terminal, the return for drain current and for the gate drive."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet package drawing on page 7 does not label the pins. The G, D, S order comes from the le; The datasheet does not say whether the mounting tab is connected to drain. The tab is not listed as ",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 8,
"cost_usd": 0.2081,
"at": "2026-10-29T01:45:54"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/bcd8803c25abdbb36648116c823c0ae0.pdf",
"pages": 8,
"sha256": "1bec8f2f46fd5881",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "rsm120040w.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.185,
"footprint_binding": "identity",
"sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
"checked": "2026-10-29",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "rsm120040w-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.185,
"footprint_binding": "identity",
"sha256": "4b24e0ebbf12a7ed9b2da7e24bd730a2f20e99d5b197c274b34117bae3795c7a",
"checked": "2026-10-29",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "REASUNOS",
"Package": "TO-247-3",
"Category": "Silicon Carbide (SiC) Devices",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "1bec8f2f46fd5881051728fb5c8c42e616ed57df8a815f5aecf53c265986c45b",
"rows": [
{
"name": "Drain-Source Voltage",
"symbol": "VDSmax",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 1200,
"conditions": "VGS=0V, ID=100μA",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage (absolute maximum)",
"symbol": "VGSmax",
"kind": "absolute_maximum",
"unit": "V",
"min": -8,
"typ": null,
"max": 22,
"conditions": "Absolute maximum values",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage (recommended operational)",
"symbol": "VGSop",
"kind": "recommended_operating",
"unit": "V",
"min": -4,
"typ": null,
"max": 18,
"conditions": "Recommended operational values",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 68,
"conditions": "VGS=18V, TC=25℃",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 49,
"conditions": "VGS=18V, TC=100℃",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "ID(pulse)",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 100,
"conditions": "Pulse width tp limited by TJmax",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 340,
"conditions": "TC=25℃, TJ=175℃",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Solder Temperature",
"symbol": "TL",
"kind": "absolute_maximum",
"unit": "℃",
"min": null,
"typ": null,
"max": 260,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "℃",
"min": -40,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 1200,
"typ": null,
"max": null,
"conditions": "VGS=0V, ID=100μA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 1.9,
"typ": 2.6,
"max": 4,
"conditions": "VGS=VDS, IDS=9.5mA, TC=25℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 1.8,
"typ": null,
"max": null,
"conditions": "VGS=VDS, IDS=9.5mA, TC=175℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": 1,
"max": 100,
"conditions": "VDS=1200V, VGS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Leakage Current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": 10,
"max": 250,
"conditions": "VGS=22V, VDS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source on-state Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 40,
"max": 53,
"conditions": "VGS=18V, ID=33.3A, TC=25℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source on-state Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": null,
"max": 65,
"conditions": "VGS=18V, ID=33.3A, TC=175℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Output Capacitance",
"symbol": "Coss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 112,
"max": null,
"conditions": "VGS=0V, VDS=1000V, f=1MHz, VAC=25mV",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Reverse Transfer Capacitance",
"symbol": "Crss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 11,
"max": null,
"conditions": "VGS=0V, VDS=1000V, f=1MHz, VAC=25mV",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-Off Energy",
"symbol": "EOFF",
"kind": "electrical",
"unit": "μJ",
"min": null,
"typ": 750,
"max": null,
"conditions": "VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, L=100μH",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-On Delay Time",
"symbol": "td(on)",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 17,
"max": null,
"conditions": "VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, RL=20Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Rise Time",
"symbol": "tr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 58,
"max": null,
"conditions": "VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, RL=20Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-Off Delay Time",
"symbol": "td(off)",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 26,
"max": null,
"conditions": "VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, RL=20Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Fall Time",
"symbol": "tf",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 15,
"max": null,
"conditions": "VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, RL=20Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Internal Gate Resistance",
"symbol": "RG(int)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 4.9,
"max": null,
"conditions": "f=1MHz, VAC=25mV",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate to Source Charge",
"symbol": "Qgs",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 34,
"max": null,
"conditions": "VDS=800V, VGS=-4/18V, ID=33.3A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate to Drain Charge",
"symbol": "Qgd",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 20,
"max": null,
"conditions": "VDS=800V, VGS=-4/18V, ID=33.3A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Total Gate Charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 121,
"max": null,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 4.5,
"max": null,
"conditions": "VGS=-4V, ISD=20A, TJ=25℃",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 4.2,
"max": null,
"conditions": "VGS=-4V, ISD=20A, TJ=175℃",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Continuous Diode Forward Current",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 51,
"conditions": "VGS=-4V, TC=25℃",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Reverse Recovery time",
"symbol": "trr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 38,
"max": null,
"conditions": "ISD=33.3A, VR=800V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Reverse Recovery Charge",
"symbol": "Qrr",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 109,
"max": null,
"conditions": "ISD=33.3A, VR=800V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Peak Reverse Recovery Current",
"symbol": "Irrm",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": 5,
"max": null,
"conditions": "ISD=33.3A, VR=800V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Thermal Resistance from Junction to Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": 0.44,
"max": null,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Thermal Resistance From Junction to Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": 40,
"max": null,
"conditions": "",
"source_page": 3,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"rsm120040w"
],
"discovery_pitch": "RSM120040W (REASUNOS) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"rsm120040w.kicad_sym",
"rsm120040w.kicad_mod",
"rsm120040w.glb",
"rsm120040w.step",
"rsm120040w.lbr",
"docs/hero.png",
"docs/rsm120040w-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"rsm120040w-hero.glb",
"rsm120040w-hero.overlay.json",
"rsm120040w-etched.glb"
],
"visibility": {
"public": true
}
}