component
RSM120040W
Public Made by Adomby adom
REASUNOS Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRSM120040W
REASUNOS · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
RSM120040W from REASUNOS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate drive input; absolute maximum VGS is -8/+22 V and recommended operating VGS is -4/+18 V, with 4.9 Ω typical internal gate resistance. |
| 2 | D | passive | Drain terminal, rated for VDS up to 1200 V and 68 A continuous at TC=25°C (100 A pulsed). |
| 3 | S | passive | Source terminal, the return for drain current and for the gate drive. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSmax | 1200 | V | VGS=0V, ID=100μA | 1 | ||
| Gate-Source Voltage (absolute maximum) | VGSmax | -8 | 22 | V | Absolute maximum values | 1 | |
| Gate-Source Voltage (recommended operational) | VGSop | -4 | 18 | V | Recommended operational values | 1 | |
| Continuous Drain Current | ID | 68 | A | VGS=18V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 49 | A | VGS=18V, TC=100℃ | 1 | ||
| Pulsed Drain Current | ID(pulse) | 100 | A | Pulse width tp limited by TJmax | 1 | ||
| Power Dissipation | PD | 340 | W | TC=25℃, TJ=175℃ | 1 | ||
| Solder Temperature | TL | 260 | ℃ | 1 | |||
| Operating Junction and Storage Temperature | TJ, Tstg | -40 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS=0V, ID=100μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.9 | 2.6 | 4 | V | VGS=VDS, IDS=9.5mA, TC=25℃ | 2 |
| Gate Threshold Voltage | VGS(th) | 1.8 | V | VGS=VDS, IDS=9.5mA, TC=175℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 100 | μA | VDS=1200V, VGS=0V | 2 | |
| Gate-Source Leakage Current | IGSS | 10 | 250 | nA | VGS=22V, VDS=0V | 2 | |
| Drain-Source on-state Resistance | RDS(on) | 40 | 53 | mΩ | VGS=18V, ID=33.3A, TC=25℃ | 2 | |
| Drain-Source on-state Resistance | RDS(on) | 65 | mΩ | VGS=18V, ID=33.3A, TC=175℃ | 2 | ||
| Output Capacitance | Coss | 112 | pF | VGS=0V, VDS=1000V, f=1MHz, VAC=25mV | 2 | ||
| Reverse Transfer Capacitance | Crss | 11 | pF | VGS=0V, VDS=1000V, f=1MHz, VAC=25mV | 2 | ||
| Turn-Off Energy | EOFF | 750 | μJ | VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, L=100μH | 2 | ||
| Turn-On Delay Time | td(on) | 17 | ns | VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, RL=20Ω | 2 | ||
| Rise Time | tr | 58 | ns | VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, RL=20Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 26 | ns | VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, RL=20Ω | 2 | ||
| Fall Time | tf | 15 | ns | VDS=800V, VGS=-4/18V, ID=33.3A, RG(ext)=2.5Ω, RL=20Ω | 2 | ||
| Internal Gate Resistance | RG(int) | 4.9 | Ω | f=1MHz, VAC=25mV | 2 | ||
| Gate to Source Charge | Qgs | 34 | nC | VDS=800V, VGS=-4/18V, ID=33.3A | 2 | ||
| Gate to Drain Charge | Qgd | 20 | nC | VDS=800V, VGS=-4/18V, ID=33.3A | 2 | ||
| Total Gate Charge | Qg | 121 | nC | 2 | |||
| Diode Forward Voltage | VSD | 4.5 | V | VGS=-4V, ISD=20A, TJ=25℃ | 3 | ||
| Diode Forward Voltage | VSD | 4.2 | V | VGS=-4V, ISD=20A, TJ=175℃ | 3 | ||
| Continuous Diode Forward Current | IS | 51 | A | VGS=-4V, TC=25℃ | 3 | ||
| Reverse Recovery time | trr | 38 | ns | ISD=33.3A, VR=800V | 3 | ||
| Reverse Recovery Charge | Qrr | 109 | nC | ISD=33.3A, VR=800V | 3 | ||
| Peak Reverse Recovery Current | Irrm | 5 | A | ISD=33.3A, VR=800V | 3 | ||
| Thermal Resistance from Junction to Case | RθJC | 0.44 | ℃/W | 3 | |||
| Thermal Resistance From Junction to Ambient | RθJA | 40 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
RSM120040W - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
rsm120040w-etched.step/rsm120040w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rsm120040w.step/rsm120040w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (8 pp, sha256
1bec8f2f46fd5881, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).