# RSJ250P10TL

**ROHM Semicon** · MOSFETs · TO-263

RSJ250P10TL from ROHM Semicon, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with an ESD protection diode to source; VGSS is limited to ±20V and VGS(th) is -1.0 to -2.5V at ID = -1mA. |
| 2 | Drain | passive | Drain terminal (tab) of the P-channel MOSFET, with VDSS of -100V and continuous drain current ID of ±25A. |
| 3 | Source | passive | Source terminal, connected to the body diode, with continuous forward current IS of -25A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source breakdown voltage | V(BR)DSS | -100 |  |  | V | VGS = 0V, ID = -1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | -1 | μA | VDS = -100V, VGS = 0V | 2 |
| Gate - Source leakage current | IGSS | -10 |  | 10 | μA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | -1 |  | -2.5 | V | VDS = -10V, ID = -1mA | 2 |
| Static drain - source on-state resistance | RDS(on) |  | 45 | 63 | mΩ | VGS = -10V, ID = -25A (pulsed) | 2 |
| Static drain - source on-state resistance | RDS(on) |  | 48 | 67 | mΩ | VGS = -4.5V, ID = -12.5A (pulsed) | 2 |
| Static drain - source on-state resistance | RDS(on) |  | 50 | 70 | mΩ | VGS = -4.0V, ID = -12.5A (pulsed) | 2 |
| Forward transfer admittance | /Yfs/ | 20 |  |  | S | VDS = -10V, ID = -25A (pulsed) | 2 |
| Continuous forward current (body diode) | IS |  |  | -25 | A | Ta = 25℃ | 3 |
| Pulse forward current (body diode) | ISP |  |  | -50 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 3 |
| Forward voltage (body diode) | VSD |  |  | -1.2 | V | VGS = 0V, IS = -25A (pulsed) | 3 |
| Drain - Source voltage | VDSS |  |  | -100 | V |  | 1 |
| Continuous drain current | ID | -25 |  | 25 | A | Tc = 25°C, limited only by maximum temperature allowed (note *1) | 1 |
| Pulsed drain current | IDP | -50 |  | 50 | A | Pw ≤ 10μs, Duty cycle ≤ 1% (note *2) | 1 |
| Gate - Source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Power dissipation | PD |  |  | 50 | W | Tc = 25°C, limited only by maximum temperature allowed (note *1) | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction - case | RthJC |  |  | 2.5 | ℃/W | note *1: Tc = 25℃, limited only by maximum temperature allowed | 2 |

## CAD (KiCad official)

- Symbol: `RSJ250P10TL`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `rsj250p10tl-etched.step` / `rsj250p10tl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rsj250p10tl.step` / `rsj250p10tl.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/rsj250p10tl-datasheet.pdf) (14 pp, sha256 `2dea958c701a9f76`, retrieved 2026-10-29, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rsj250p10tl-datasheet.pdf)