component
RSJ250P10TL
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRSJ250P10TL
ROHM Semicon · MOSFETs · TO-263
RSJ250P10TL from ROHM Semicon, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with an ESD protection diode to source; VGSS is limited to ±20V and VGS(th) is -1.0 to -2.5V at ID = -1mA. |
| 2 | Drain | passive | Drain terminal (tab) of the P-channel MOSFET, with VDSS of -100V and continuous drain current ID of ±25A. |
| 3 | Source | passive | Source terminal, connected to the body diode, with continuous forward current IS of -25A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source breakdown voltage | V(BR)DSS | -100 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -100V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -1 | -2.5 | V | VDS = -10V, ID = -1mA | 2 | |
| Static drain - source on-state resistance | RDS(on) | 45 | 63 | mΩ | VGS = -10V, ID = -25A (pulsed) | 2 | |
| Static drain - source on-state resistance | RDS(on) | 48 | 67 | mΩ | VGS = -4.5V, ID = -12.5A (pulsed) | 2 | |
| Static drain - source on-state resistance | RDS(on) | 50 | 70 | mΩ | VGS = -4.0V, ID = -12.5A (pulsed) | 2 | |
| Forward transfer admittance | /Yfs/ | 20 | S | VDS = -10V, ID = -25A (pulsed) | 2 | ||
| Continuous forward current (body diode) | IS | -25 | A | Ta = 25℃ | 3 | ||
| Pulse forward current (body diode) | ISP | -50 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 3 | ||
| Forward voltage (body diode) | VSD | -1.2 | V | VGS = 0V, IS = -25A (pulsed) | 3 | ||
| Drain - Source voltage | VDSS | -100 | V | 1 | |||
| Continuous drain current | ID | -25 | 25 | A | Tc = 25°C, limited only by maximum temperature allowed (note *1) | 1 | |
| Pulsed drain current | IDP | -50 | 50 | A | Pw ≤ 10μs, Duty cycle ≤ 1% (note *2) | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Power dissipation | PD | 50 | W | Tc = 25°C, limited only by maximum temperature allowed (note *1) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - case | RthJC | 2.5 | ℃/W | note *1: Tc = 25℃, limited only by maximum temperature allowed | 2 |
CAD (KiCad official)
- Symbol:
RSJ250P10TL - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
rsj250p10tl-etched.step/rsj250p10tl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rsj250p10tl.step/rsj250p10tl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
2dea958c701a9f76, retrieved 2026-10-29, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).