# RSF45N50W

**REASUNOS** · MOSFETs · TO-247-3

RSF45N50W from REASUNOS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±30 V absolute maximum and a threshold of 3 V min to 4 V max at ID=250µA. |
| 2 | D | passive | Drain, also connected to the mounting tab; rated for 500 V VDSS and 45 A continuous at TC=25℃ (180 A pulsed). |
| 3 | S | passive | Source; carries up to 45 A continuous through the MOSFET and its integral body diode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 500 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 45 | A | TC=25℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 180 | A | Note*1 repetitive rating, pulse width limited by max junction temperature | 1 |
| Power Dissipation | PD |  |  | 250 | W |  | 1 |
| Gate-to-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 2580 | mJ | L = 10mH, VDD = 50V, RG = 25 Ω | 1 |
| Maximum Temperature for Soldering Leads | TL |  |  | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 |
| Maximum Temperature for Soldering Package Body | TPKG |  |  | 260 | ℃ | Package body for 10 seconds | 1 |
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 500 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=500V, VGS=0 | 2 |
| Gate-to-Source Forward Leakage Current | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-to-Source Reverse Leakage Current | IGSS |  |  | -100 | nA | VGS=-30V, VDS=0 | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 0.105 | 0.12 | Ω | VGS=10V, ID=22.5A | 2 |
| Gate Threshold Voltage | VGS(TH) | 3 |  | 4 | V | VGS=VDS, ID=250µA | 2 |
| Continuous Source Current | IS |  |  | 45 | A |  | 3 |
| Maximum Pulsed Current | ISM |  |  | 180 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.4 | V | IS=22.5A, VGS=0V | 3 |
| Junction-to-Case Thermal Resistance | RθJC |  | 0.5 |  | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA |  | 40 |  | ℃/W | 1 cubic foot chamber, free air | 2 |

## CAD (KiCad official)

- Symbol: `RSF45N50W`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `rsf45n50w-etched.step` / `rsf45n50w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rsf45n50w.step` / `rsf45n50w.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [REASUNOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590918979038748672) (8 pp, sha256 `a36122bd603db6ef`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rsf45n50w-datasheet.pdf)