component

RS6L090BGTB1

Public Made by Adom

by adom

ROHM Semicon MOSFETs, HSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsrs6l090bgtb1factory-2.0.0extractor-text

Verified RS6L090BGTB1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: RS6L090BGTB1 · HSOP-8 · 9 pins
  • ✓copper: 9 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 13-page datasheet
  • ✓distributor: lcsc C20109366, digikey 846-RS6L090BGTB1TR-ND, mouser 755-RS6L090BGTB1
  • ✓family: SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-f652ifdr/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ rs6l090bgtb1.kicad_sym✓ rs6l090bgtb1.kicad_mod✓ rs6l090bgtb1.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers rs6l090bgtb1: viewers · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago
rs6l090bgtb1-etched.glb Publish 0.1.0 · Ray 8d ago
rs6l090bgtb1-etched.step rs6l090bgtb1: factory component page (tier=mfr) · Ray 8d ago
rs6l090bgtb1-hero.glb rs6l090bgtb1: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
rs6l090bgtb1-hero.overlay.json Publish 0.1.0 · Ray 8d ago
rs6l090bgtb1.glb Publish 0.1.0 · Ray 8d ago
rs6l090bgtb1.kicad_mod Publish 0.1.0 · Ray 8d ago
rs6l090bgtb1.kicad_sym Publish 0.1.0 · Ray 8d ago
rs6l090bgtb1.lbr Publish 0.1.0 · Ray 8d ago
rs6l090bgtb1.step Publish 0.1.0 · Ray 8d ago
verification.json Verified: Published by the parts factory: tier mfr, 9 pins · Ray 8d ago

RS6L090BGTB1

ROHM Semicon · MOSFETs · HSOP-8

RS6L090BGTB1 from ROHM Semicon, in a HSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel MOSFET, connected internally with pins 2 and 3 (VDSS 60V, ID ±90A).
2 Source passive Source terminal of the N-channel MOSFET, connected internally with pins 1 and 3 (VDSS 60V, ID ±90A).
3 Source passive Source terminal of the N-channel MOSFET, connected internally with pins 1 and 2 (VDSS 60V, ID ±90A).
4 Gate input Gate terminal with VGSS rating of ±20V and threshold VGS(th) of 1.0 to 2.5V at ID = 1mA.
5 Drain passive Drain terminal, shorted internally with pins 6, 7 and 8 (VDSS 60V, ID ±90A, RDS(on) max 4.7mΩ at VGS = 10V).
6 Drain passive Drain terminal, shorted internally with pins 5, 7 and 8 (VDSS 60V, ID ±90A, RDS(on) max 4.7mΩ at VGS = 10V).
7 Drain passive Drain terminal, shorted internally with pins 5, 6 and 8 (VDSS 60V, ID ±90A, RDS(on) max 4.7mΩ at VGS = 10V).
8 Drain passive Drain terminal, shorted internally with pins 5, 6 and 7 (VDSS 60V, ID ±90A, RDS(on) max 4.7mΩ at VGS = 10V).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package HSOP-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS 60 V Ta=25°C 1
Continuous drain current ID -90 90 A VGS=10V, Tc=25°C, limited only by max temperature 1
Pulsed drain current IDP -360 360 A Pw≤10μs, Duty cycle≤1% 1
Gate-Source voltage VGSS -20 20 V 1
Avalanche current, single pulse IAS 30 A L≈0.1mH, VDD=30V, RG=25Ω, starting Tj=25°C 1
Avalanche energy, single pulse EAS 70 mJ L≈0.1mH, VDD=30V, RG=25Ω, starting Tj=25°C 1
Power dissipation PD 73 W Tc=25°C, limited only by max temperature 1
Power dissipation PD 3 W Mounted on Cu board (40×40×0.8mm) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction-case RthJC 1.7 ℃/W Tc=25°C 2
Thermal resistance, junction-ambient RthJA 41.7 ℃/W Mounted on Cu board (40×40×0.8mm) 2
Drain-Source breakdown voltage V(BR)DSS 60 V VGS=0V, ID=1mA 2
Zero gate voltage drain current IDSS 2 μA VDS=60V, VGS=0V 2
Gate-Source leakage current IGSS -200 200 nA VGS=±20V, VDS=0V 2
Gate threshold voltage VGS(th) 1 2.5 V VDS=VGS, ID=1mA 2
Static drain-source on-state resistance RDS(on) 3.6 4.7 mΩ VGS=10V, ID=90A, pulsed 2
Static drain-source on-state resistance RDS(on) 5.3 7.4 mΩ VGS=4.5V, ID=45A, pulsed 2
Forward transfer admittance /Yfs/ 27 S VDS=5V, ID=45A, pulsed 2
Continuous forward current (body diode) IS 60 A Ta=25°C 3
Pulse forward current (body diode) ISP 360 A Pw≤10μs, Duty cycle≤1% 3
Forward voltage (body diode) VSD 1.2 V VGS=0V, IS=60A, pulsed 3
Breakdown voltage temperature coefficient ΔV(BR)DSS/ΔTj 38.9 mV/℃ ID=1mA, referenced to 25℃ 2
Gate threshold voltage temperature coefficient ΔVGS(th)/ΔTj -4.7 mV/℃ ID=1mA, referenced to 25℃ 2
Gate resistance RG 1.4 Ω 2
Input capacitance Ciss 1950 pF VGS=0V, VDS=30V, f=1MHz 3
Output capacitance Coss 455 pF VGS=0V, VDS=30V, f=1MHz 3
Reverse transfer capacitance Crss 34 pF VGS=0V, VDS=30V, f=1MHz 3
Turn-on delay time td(on) 18 ns VDD≈30V, VGS=10V, ID=45A, RL≈0.66Ω, RG=10Ω 3
Rise time tr 13 ns VDD≈30V, VGS=10V, ID=45A, RL≈0.66Ω, RG=10Ω 3
Turn-off delay time td(off) 50 ns VDD≈30V, VGS=10V, ID=45A, RL≈0.66Ω, RG=10Ω 3
Fall time tf 15 ns VDD≈30V, VGS=10V, ID=45A, RL≈0.66Ω, RG=10Ω 3
Total gate charge Qg 28 nC VDD≈30V, ID=50A, VGS=10V 3
Total gate charge Qg 14 nC VDD≈30V, ID=50A, VGS=4.5V 3
Gate-Source charge Qgs 5.3 nC VDD≈30V, ID=50A 3
Gate-Drain charge Qgd 4.1 nC VDD≈30V, ID=50A 3
Reverse recovery time trr 41 ns IS=50A, VGS=0V, di/dt=100A/μs 3
Reverse recovery charge Qrr 43 nC IS=50A, VGS=0V, di/dt=100A/μs 3

CAD (KiCad official)

  • Symbol: RS6L090BGTB1
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm
  • 3D model: HSOP-8 (KiCad packages3D, STEP)
  • 3D model files: rs6l090bgtb1-etched.step / rs6l090bgtb1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs6l090bgtb1.step / rs6l090bgtb1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (13 pp, sha256 d6621f6f7b42162b, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF