component
RS6L090BGTB1
Public Made by Adomby adom
ROHM Semicon MOSFETs, HSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRS6L090BGTB1
ROHM Semicon · MOSFETs · HSOP-8
RS6L090BGTB1 from ROHM Semicon, in a HSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET, connected internally with pins 2 and 3 (VDSS 60V, ID ±90A). |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, connected internally with pins 1 and 3 (VDSS 60V, ID ±90A). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, connected internally with pins 1 and 2 (VDSS 60V, ID ±90A). |
| 4 | Gate | input | Gate terminal with VGSS rating of ±20V and threshold VGS(th) of 1.0 to 2.5V at ID = 1mA. |
| 5 | Drain | passive | Drain terminal, shorted internally with pins 6, 7 and 8 (VDSS 60V, ID ±90A, RDS(on) max 4.7mΩ at VGS = 10V). |
| 6 | Drain | passive | Drain terminal, shorted internally with pins 5, 7 and 8 (VDSS 60V, ID ±90A, RDS(on) max 4.7mΩ at VGS = 10V). |
| 7 | Drain | passive | Drain terminal, shorted internally with pins 5, 6 and 8 (VDSS 60V, ID ±90A, RDS(on) max 4.7mΩ at VGS = 10V). |
| 8 | Drain | passive | Drain terminal, shorted internally with pins 5, 6 and 7 (VDSS 60V, ID ±90A, RDS(on) max 4.7mΩ at VGS = 10V). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | HSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 60 | V | Ta=25°C | 1 | ||
| Continuous drain current | ID | -90 | 90 | A | VGS=10V, Tc=25°C, limited only by max temperature | 1 | |
| Pulsed drain current | IDP | -360 | 360 | A | Pw≤10μs, Duty cycle≤1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche current, single pulse | IAS | 30 | A | L≈0.1mH, VDD=30V, RG=25Ω, starting Tj=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 70 | mJ | L≈0.1mH, VDD=30V, RG=25Ω, starting Tj=25°C | 1 | ||
| Power dissipation | PD | 73 | W | Tc=25°C, limited only by max temperature | 1 | ||
| Power dissipation | PD | 3 | W | Mounted on Cu board (40×40×0.8mm) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RthJC | 1.7 | ℃/W | Tc=25°C | 2 | ||
| Thermal resistance, junction-ambient | RthJA | 41.7 | ℃/W | Mounted on Cu board (40×40×0.8mm) | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V, ID=1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 2 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate-Source leakage current | IGSS | -200 | 200 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=1mA | 2 | |
| Static drain-source on-state resistance | RDS(on) | 3.6 | 4.7 | mΩ | VGS=10V, ID=90A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 5.3 | 7.4 | mΩ | VGS=4.5V, ID=45A, pulsed | 2 | |
| Forward transfer admittance | /Yfs/ | 27 | S | VDS=5V, ID=45A, pulsed | 2 | ||
| Continuous forward current (body diode) | IS | 60 | A | Ta=25°C | 3 | ||
| Pulse forward current (body diode) | ISP | 360 | A | Pw≤10μs, Duty cycle≤1% | 3 | ||
| Forward voltage (body diode) | VSD | 1.2 | V | VGS=0V, IS=60A, pulsed | 3 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | 38.9 | mV/℃ | ID=1mA, referenced to 25℃ | 2 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | -4.7 | mV/℃ | ID=1mA, referenced to 25℃ | 2 | ||
| Gate resistance | RG | 1.4 | Ω | 2 | |||
| Input capacitance | Ciss | 1950 | pF | VGS=0V, VDS=30V, f=1MHz | 3 | ||
| Output capacitance | Coss | 455 | pF | VGS=0V, VDS=30V, f=1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 34 | pF | VGS=0V, VDS=30V, f=1MHz | 3 | ||
| Turn-on delay time | td(on) | 18 | ns | VDD≈30V, VGS=10V, ID=45A, RL≈0.66Ω, RG=10Ω | 3 | ||
| Rise time | tr | 13 | ns | VDD≈30V, VGS=10V, ID=45A, RL≈0.66Ω, RG=10Ω | 3 | ||
| Turn-off delay time | td(off) | 50 | ns | VDD≈30V, VGS=10V, ID=45A, RL≈0.66Ω, RG=10Ω | 3 | ||
| Fall time | tf | 15 | ns | VDD≈30V, VGS=10V, ID=45A, RL≈0.66Ω, RG=10Ω | 3 | ||
| Total gate charge | Qg | 28 | nC | VDD≈30V, ID=50A, VGS=10V | 3 | ||
| Total gate charge | Qg | 14 | nC | VDD≈30V, ID=50A, VGS=4.5V | 3 | ||
| Gate-Source charge | Qgs | 5.3 | nC | VDD≈30V, ID=50A | 3 | ||
| Gate-Drain charge | Qgd | 4.1 | nC | VDD≈30V, ID=50A | 3 | ||
| Reverse recovery time | trr | 41 | ns | IS=50A, VGS=0V, di/dt=100A/μs | 3 | ||
| Reverse recovery charge | Qrr | 43 | nC | IS=50A, VGS=0V, di/dt=100A/μs | 3 |
CAD (KiCad official)
- Symbol:
RS6L090BGTB1 - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm - 3D model: HSOP-8 (KiCad packages3D, STEP)
- 3D model files:
rs6l090bgtb1-etched.step/rs6l090bgtb1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs6l090bgtb1.step/rs6l090bgtb1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
d6621f6f7b42162b, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).