component
RS60N30D
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REASUNOS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RS60N30D
REASUNOS · MOSFETs · TO-252
RS60N30D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and threshold VGS(TH) 1.2 V min, 1.5 V typ, 2.5 V max at ID=250µA. |
| 2 | D | passive | Drain (center lead, shorted to the metal tab); VDSS 60 V, continuous ID 30 A at TC=25℃ and pulsed IDM 60 A. |
| 3 | S | passive | Source; continuous source-diode current IS is 30 A max with VSD up to 1.2 V at IS=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V ,VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V ,VDS=0 | 2 | ||
| Drain-to-Source Voltage | VDSS | 60 | V | 1 | |||
| Continuous Drain Current | ID | 30 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 14 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Power Dissipation | PD | 45 | W | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 72 | mJ | L = 0.5mH,VDD = 30V, VG = 10V, Tj = 25℃ | 1 | ||
| Maximum Temperature for Soldering, leads at 0.063in (1.6mm) from case for 10 seconds | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering, package body for 10 seconds | TPKG | 260 | ℃ | Package body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 3.3 | ℃/ W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 60 | ℃/ W | 1 cubic foot chamber, free air | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V,ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=60V,VGS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 22 | 35 | mΩ | VGS=10V,ID=20A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 26 | 40 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1.2 | 1.5 | 2.5 | V | VGS=VDS,ID=250µA | 2 |
| Continuous Source Current | IS | 30 | A | Integral pn-diode in MOSFET | 3 | ||
| Maximum Pulsed Current | ISM | 60 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=20A,VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
RS60N30D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rs60n30d-etched.step/rs60n30d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs60n30d.step/rs60n30d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (9 pp, sha256
a9791506dd36bd27, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RS60N30D
**REASUNOS** · MOSFETs · TO-252
RS60N30D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and threshold VGS(TH) 1.2 V min, 1.5 V typ, 2.5 V max at ID=250µA. |
| 2 | D | passive | Drain (center lead, shorted to the metal tab); VDSS 60 V, continuous ID 30 A at TC=25℃ and pulsed IDM 60 A. |
| 3 | S | passive | Source; continuous source-diode current IS is 30 A max with VSD up to 1.2 V at IS=20A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V ,VDS=0V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-20V ,VDS=0 | 2 |
| Drain-to-Source Voltage | VDSS | | | 60 | V | | 1 |
| Continuous Drain Current | ID | | | 30 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 14 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 60 | A | | 1 |
| Power Dissipation | PD | | | 45 | W | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 72 | mJ | L = 0.5mH,VDD = 30V, VG = 10V, Tj = 25℃ | 1 |
| Maximum Temperature for Soldering, leads at 0.063in (1.6mm) from case for 10 seconds | TL | | | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 |
| Maximum Temperature for Soldering, package body for 10 seconds | TPKG | | | 260 | ℃ | Package body for 10 seconds | 1 |
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 | | 150 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 3.3 | ℃/ W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 60 | ℃/ W | 1 cubic foot chamber, free air | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V,ID=250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=60V,VGS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 22 | 35 | mΩ | VGS=10V,ID=20A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 26 | 40 | mΩ | VGS=4.5V,ID=10A | 2 |
| Gate Threshold Voltage | VGS(TH) | 1.2 | 1.5 | 2.5 | V | VGS=VDS,ID=250µA | 2 |
| Continuous Source Current | IS | | | 30 | A | Integral pn-diode in MOSFET | 3 |
| Maximum Pulsed Current | ISM | | | 60 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS=20A,VGS=0V | 3 |
## CAD (KiCad official)
- Symbol: `RS60N30D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `rs60n30d-etched.step` / `rs60n30d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs60n30d.step` / `rs60n30d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [REASUNOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590907372863115264) (9 pp, sha256 `a9791506dd36bd27`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rs60n30d-datasheet.pdf)