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RS60N30D

Public Made by Adom

by adom

REASUNOS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RS60N30D

REASUNOS · MOSFETs · TO-252

RS60N30D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and threshold VGS(TH) 1.2 V min, 1.5 V typ, 2.5 V max at ID=250µA.
2 D passive Drain (center lead, shorted to the metal tab); VDSS 60 V, continuous ID 30 A at TC=25℃ and pulsed IDM 60 A.
3 S passive Source; continuous source-diode current IS is 30 A max with VSD up to 1.2 V at IS=20A.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V ,VDS=0V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V ,VDS=0 2
Drain-to-Source Voltage VDSS 60 V 1
Continuous Drain Current ID 30 A TC=25℃ 1
Continuous Drain Current ID 14 A TC=100℃ 1
Pulsed Drain Current IDM 60 A 1
Power Dissipation PD 45 W 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 72 mJ L = 0.5mH,VDD = 30V, VG = 10V, Tj = 25℃ 1
Maximum Temperature for Soldering, leads at 0.063in (1.6mm) from case for 10 seconds TL 300 ℃ Leads at 0.063in(1.6mm) from case for 10 seconds 1
Maximum Temperature for Soldering, package body for 10 seconds TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 3.3 ℃/ W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 60 ℃/ W 1 cubic foot chamber, free air 2
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS=0V,ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=60V,VGS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 22 35 mΩ VGS=10V,ID=20A 2
Static Drain-to-Source On-Resistance RDS(on) 26 40 mΩ VGS=4.5V,ID=10A 2
Gate Threshold Voltage VGS(TH) 1.2 1.5 2.5 V VGS=VDS,ID=250µA 2
Continuous Source Current IS 30 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 60 A 3
Diode Forward Voltage VSD 1.2 V IS=20A,VGS=0V 3

CAD (KiCad official)

  • Symbol: RS60N30D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rs60n30d-etched.step / rs60n30d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs60n30d.step / rs60n30d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (9 pp, sha256 a9791506dd36bd27, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF