# RS4435

**REASUNOS** · MOSFETs · SOP-8

RS4435 from REASUNOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS = -30V, ID = -10A continuous at Tc=25℃. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the same source node as pins 1, 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the same source node as pins 1, 2. |
| 4 | G | input | Gate; VGS rated ±20V maximum, with RDS(ON) < 34mΩ at VGS=-4.5V and < 20mΩ at VGS=-10V. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS rated -30V, pulsed drain current -40A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 7, 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 6, 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 6, 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | -10 | A | Tc=25℃ | 1 |
| Drain Current-Continuous | ID |  |  | -6.3 | A | Tc=100℃ | 1 |
| Drain Current-Pulsed | IDM (pluse) |  |  | -40 | A | Repetitive, pulse width limited by maximum junction temperature (Note 1) | 1 |
| Maximum Power Dissipation | PD |  |  | 3.2 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=-24V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 15 | 20 | mΩ | VGS=-10V, ID=-10A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 21 | 34 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Junction-to-Ambient Thermal Resistance | RJA |  | 39 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `RS4435`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `rs4435-etched.step` / `rs4435-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs4435.step` / `rs4435.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [REASUNOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603059379621285888) (5 pp, sha256 `f7142193dd74e572`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rs4435-datasheet.pdf)