component
RS4435
Public Made by Adomby adom
REASUNOS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| rs4435-etched.glb | 23d ago |
| rs4435-etched.step | 23d ago |
| rs4435-hero.glb | 23d ago |
| rs4435-hero.overlay.json | 23d ago |
| rs4435.glb | 23d ago |
| rs4435.kicad_mod | 23d ago |
| rs4435.kicad_sym | 23d ago |
| rs4435.lbr | 23d ago |
| rs4435.step | 23d ago |
RS4435
REASUNOS · MOSFETs · SOP-8
RS4435 from REASUNOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS = -30V, ID = -10A continuous at Tc=25℃. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the same source node as pins 1, 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the same source node as pins 1, 2. |
| 4 | G | input | Gate; VGS rated ±20V maximum, with RDS(ON) < 34mΩ at VGS=-4.5V and < 20mΩ at VGS=-10V. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS rated -30V, pulsed drain current -40A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 7, 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 6, 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 6, 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | -10 | A | Tc=25℃ | 1 | ||
| Drain Current-Continuous | ID | -6.3 | A | Tc=100℃ | 1 | ||
| Drain Current-Pulsed | IDM (pluse) | -40 | A | Repetitive, pulse width limited by maximum junction temperature (Note 1) | 1 | ||
| Maximum Power Dissipation | PD | 3.2 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-24V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 15 | 20 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 21 | 34 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Junction-to-Ambient Thermal Resistance | RJA | 39 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
RS4435 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
rs4435-etched.step/rs4435-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs4435.step/rs4435.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (5 pp, sha256
f7142193dd74e572, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).