# RS3GB

**MDD（Microdiode Electronics）** · Diodes - Fast Recovery Rectifiers · SMB

RS3GB from MDD（Microdiode Electronics）, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode terminal, identified by the polarity marking on the body; RS3GB is rated 400 V repetitive peak reverse voltage and 3.0 A average forward current. |
| 2 | A | passive | Anode terminal of the fast recovery rectifier; forward voltage is 1.3 V maximum at 3.0 A and peak surge current is 90 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MDD（Microdiode Electronics） |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM |  |  | 400 | V |  | 1 |
| Maximum RMS voltage | VRMS |  |  | 280 | V |  | 1 |
| Maximum DC blocking voltage | VDC |  |  | 400 | V |  | 1 |
| Maximum average forward rectified current | I(AV) |  |  | 3 | A |  | 1 |
| Peak forward surge current | IFSM |  |  | 90 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 |
| Maximum instantaneous forward voltage | VF |  |  | 1.3 | V | at 3.0A | 1 |
| Maximum DC reverse current | IR |  |  | 5 | μA | TA=25℃, at rated DC blocking voltage | 1 |
| Maximum DC reverse current | IR |  |  | 100 | μA | TA=125℃, at rated DC blocking voltage | 1 |
| Maximum reverse recovery time | trr |  |  | 150 | ns | IF=0.5A, IR=1.0A, Irr=0.25A | 1 |
| Operating junction and storage temperature range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Typical junction capacitance | CJ |  | 40 |  | pF | Measured at 1MHz and applied reverse voltage of 4.0V D.C. | 1 |
| Typical thermal resistance, junction to ambient | RθJA |  | 48 |  | ℃/W | P.C.B. mounted with 0.2x0.2in (5.0x5.0mm) copper pad areas | 1 |
| Typical thermal resistance, junction to case | RθJC |  | 16 |  | ℃/W | P.C.B. mounted with 0.2x0.2in (5.0x5.0mm) copper pad areas | 1 |

## CAD (KiCad official)

- Symbol: `RS3GB`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `rs3gb-etched.step` / `rs3gb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs3gb.step` / `rs3gb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MDD（Microdiode Electronics） datasheet](docs/rs3gb-datasheet.pdf) (3 pp, sha256 `e2a0041318269ecf`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rs3gb-datasheet.pdf)