component
RS3GB
Public Made by Adomby adom
MDD（Microdiode Electronics） Diodes - Fast Recovery Rectifiers, SMB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRS3GB
MDD（Microdiode Electronics） · Diodes - Fast Recovery Rectifiers · SMB
RS3GB from MDD（Microdiode Electronics）, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode terminal, identified by the polarity marking on the body; RS3GB is rated 400 V repetitive peak reverse voltage and 3.0 A average forward current. |
| 2 | A | passive | Anode terminal of the fast recovery rectifier; forward voltage is 1.3 V maximum at 3.0 A and peak surge current is 90 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MDD（Microdiode Electronics） |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 400 | V | 1 | |||
| Maximum RMS voltage | VRMS | 280 | V | 1 | |||
| Maximum DC blocking voltage | VDC | 400 | V | 1 | |||
| Maximum average forward rectified current | I(AV) | 3 | A | 1 | |||
| Peak forward surge current | IFSM | 90 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 | ||
| Maximum instantaneous forward voltage | VF | 1.3 | V | at 3.0A | 1 | ||
| Maximum DC reverse current | IR | 5 | μA | TA=25℃, at rated DC blocking voltage | 1 | ||
| Maximum DC reverse current | IR | 100 | μA | TA=125℃, at rated DC blocking voltage | 1 | ||
| Maximum reverse recovery time | trr | 150 | ns | IF=0.5A, IR=1.0A, Irr=0.25A | 1 | ||
| Operating junction and storage temperature range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Typical junction capacitance | CJ | 40 | pF | Measured at 1MHz and applied reverse voltage of 4.0V D.C. | 1 | ||
| Typical thermal resistance, junction to ambient | RθJA | 48 | ℃/W | P.C.B. mounted with 0.2x0.2in (5.0x5.0mm) copper pad areas | 1 | ||
| Typical thermal resistance, junction to case | RθJC | 16 | ℃/W | P.C.B. mounted with 0.2x0.2in (5.0x5.0mm) copper pad areas | 1 |
CAD (KiCad official)
- Symbol:
RS3GB - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
rs3gb-etched.step/rs3gb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs3gb.step/rs3gb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MDD（Microdiode Electronics） datasheet (3 pp, sha256
e2a0041318269ecf, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).