component
RS1L151ATTB1
Public Made by Adomby adom
ROHM Semicon MOSFETs, HSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439440441442443444445446447448449450451452453454455456457458459460461462463464465466467468469470471472473474475476477478479480481482483484485486487488489490491492493494495496497498499500501502503504505506507508509510511512513514515516517518519520521522523524525526527528529530531532533534535536537538539540541542543544545546547548549550551552553554555556557558559560561562563564565566567568569570571572573574575576577578579580581582583584585586587588589590591592593594595596597598599600601602603604605606607608609610611612613614615616617618619620621622623624625626627628629630631632633634635636637638639640641642643644645646647648649650651652653654655656657658659660661662663664665666667668669670671672673674675676677678679680681682683684685686687688689690691692693694695696697698699700701702703704705
{
"schema_version": 1,
"type": "component",
"slug": "rs1l151attb1",
"title": "RS1L151ATTB1",
"brief": "ROHM Semicon MOSFETs, HSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"rs1l151attb1",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "RS1L151ATTB1",
"manufacturer": "ROHM Semicon",
"package": "HSOP-8",
"pin_count": 9,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590275055130750976",
"parts": {
"symbol": "rs1l151attb1.kicad_sym",
"footprint": "rs1l151attb1.kicad_mod",
"model_3d": "rs1l151attb1-hero.glb",
"model_3d_plain": "rs1l151attb1-etched.glb",
"model_3d_step": "rs1l151attb1-etched.step",
"model_3d_step_plain": "rs1l151attb1.step",
"lbr": "rs1l151attb1.lbr"
},
"distributor_links": {
"lcsc": "C3278139"
},
"distributor_check": {
"checked_at": "2026-10-18T13:37:35Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "Source",
"type": "passive",
"description": "Source of the P-channel MOSFET; drain-source voltage rated -60V, continuous drain current ±56A at Tc = 25°C."
},
{
"number": "2",
"name": "Source",
"type": "passive",
"description": "Source of the P-channel MOSFET, internally tied to the other source pins (1, 3)."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source of the P-channel MOSFET, internally tied to the other source pins (1, 2)."
},
{
"number": "4",
"name": "Gate",
"type": "input",
"description": "Gate of the P-channel MOSFET; gate-source voltage limited to ±20V, threshold -1.0V to -2.5V at ID = -1mA."
},
{
"number": "5",
"name": "Drain",
"type": "passive",
"description": "Drain of the P-channel MOSFET; VDSS -60V, RDS(on) max 11.3mΩ at VGS = -10V, ID = -15A."
},
{
"number": "6",
"name": "Drain",
"type": "passive",
"description": "Drain of the P-channel MOSFET, internally tied to the other drain pins (5, 7, 8)."
},
{
"number": "7",
"name": "Drain",
"type": "passive",
"description": "Drain of the P-channel MOSFET, internally tied to the other drain pins (5, 6, 8)."
},
{
"number": "8",
"name": "Drain",
"type": "passive",
"description": "Drain of the P-channel MOSFET, internally tied to the other drain pins (5, 6, 7)."
},
{
"number": "9",
"name": "EP",
"type": "passive",
"description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet's inner circuit shows pins 5-8 (Drain) and 1-3 (Source) as separate leads. The package",
"exposed pad 9 added from the footprint",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 13,
"cost_usd": 0.3295,
"at": "2026-10-18T13:35:31"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590275055130750976",
"pages": 13,
"sha256": "fe5e8078a01a478f",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 9,
"described": 9,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "rs1l151attb1.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.9,
1.55
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "2d6f7e774e8143e3320cbd59eb5be9f3b7864614644e3b072006e1eb05fb7fa6",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "rs1l151attb1-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.9,
1.55
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "9274f8d9c6eb7107a8a3634f59ff45fb8938294876925648ded2e8456bb18bf8",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "ROHM Semicon",
"Package": "HSOP-8",
"Category": "Transistors/Thyristors",
"Pins": "9"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "fe5e8078a01a478ffd71e73fbad18c6a8cb9dbb26e0c1e04f2102d4576718711",
"rows": [
{
"name": "Drain - Source voltage",
"symbol": "VDSS",
"kind": "absolute_maximum",
"unit": "V",
"min": -60,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous drain current (Tc = 25°C)",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -56,
"typ": null,
"max": 56,
"conditions": "Tc = 25°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous drain current (Ta = 25°C)",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -15,
"typ": null,
"max": 15,
"conditions": "Ta = 25°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed drain current",
"symbol": "IDP",
"kind": "absolute_maximum",
"unit": "A",
"min": -60,
"typ": null,
"max": 60,
"conditions": "Pw ≤ 10μs, Duty cycle ≤ 1%",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate - Source voltage",
"symbol": "VGSS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche current, single pulse",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": -15,
"typ": null,
"max": null,
"conditions": "L ≃ 0.1mH, VDD = -30V, RG = 25Ω, Starting Tj = 25℃ (note *3)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche energy, single pulse",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 16,
"conditions": "L ≃ 0.1mH, VDD = -30V, RG = 25Ω, Starting Tj = 25℃ (note *3)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 40,
"conditions": "Tc = 25°C (note *1)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 3,
"conditions": "Mounted on a Cu board (40×40×0.8mm) (note *4)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Junction temperature",
"symbol": "Tj",
"kind": "absolute_maximum",
"unit": "℃",
"min": null,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating junction and storage temperature range",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "℃",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Thermal resistance, junction - case",
"symbol": "RthJC",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": null,
"max": 3.1,
"conditions": "Tc = 25℃, limited only by maximum temperature allowed (note *1)",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal resistance, junction - ambient",
"symbol": "RthJA",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": null,
"max": 41.7,
"conditions": "Mounted on a Cu board (40×40×0.8mm) (note *4)",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain - Source breakdown voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": -60,
"typ": null,
"max": null,
"conditions": "VGS = 0V, ID = -1mA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": null,
"max": -1,
"conditions": "VDS = -60V, VGS = 0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate - Source leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VGS = ±20V, VDS = 0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate threshold voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": -1,
"typ": null,
"max": -2.5,
"conditions": "VDS = VGS, ID = -1mA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Static drain - source on - state resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 8.9,
"max": 11.3,
"conditions": "VGS = -10V, ID = -15A (note *5 pulsed)",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Static drain - source on - state resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 9.9,
"max": 12.6,
"conditions": "VGS = -4.5V, ID = -15A (note *5 pulsed)",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Forward Transfer Admittance",
"symbol": "|Yfs|",
"kind": "electrical",
"unit": "S",
"min": 25,
"typ": null,
"max": null,
"conditions": "VDS = -5V, ID = -15A (note *5 pulsed)",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Continuous forward current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": -2.5,
"conditions": "Ta = 25℃",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Pulse forward current",
"symbol": "ISP",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": -60,
"conditions": "Pw ≤ 10μs, Duty cycle ≤ 1% (note *2)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Forward voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": -1.2,
"conditions": "VGS = 0V, IS = -2.5A (note *5 pulsed)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Breakdown voltage temperature coefficient",
"symbol": "ΔV(BR)DSS/ΔTj",
"kind": "temperature_coefficient",
"unit": "mV/℃",
"min": null,
"typ": -22,
"max": null,
"conditions": "ID = -1mA, referenced to 25℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate threshold voltage temperature coefficient",
"symbol": "ΔVGS(th)/ΔTj",
"kind": "temperature_coefficient",
"unit": "mV/℃",
"min": null,
"typ": 3.7,
"max": null,
"conditions": "ID = -1mA, referenced to 25℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate resistance",
"symbol": "RG",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 4.2,
"max": null,
"conditions": "f = 1MHz, open drain",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Input capacitance",
"symbol": "Ciss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 6900,
"max": null,
"conditions": "VGS = 0V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Output capacitance",
"symbol": "Coss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 455,
"max": null,
"conditions": "VDS = -30V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Reverse transfer capacitance",
"symbol": "Crss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 345,
"max": null,
"conditions": "f = 1MHz",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Turn - on delay time",
"symbol": "td(on)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 22,
"max": null,
"conditions": "VDD ⋍ -30V, VGS = -10V (note *5)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Rise time",
"symbol": "tr",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 70,
"max": null,
"conditions": "ID = -7.5A (note *5)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Turn - off delay time",
"symbol": "td(off)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 350,
"max": null,
"conditions": "RL ⋍ 4Ω (note *5)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Fall time",
"symbol": "tf",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 220,
"max": null,
"conditions": "RG = 10Ω (note *5)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Total gate charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 130,
"max": null,
"conditions": "VDD ⋍ -30V, ID = -15A, VGS = -10V (note *5)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Total gate charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 59,
"max": null,
"conditions": "VDD ⋍ -30V, ID = -15A, VGS = -4.5V (note *5)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate - Source charge",
"symbol": "Qgs",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 22,
"max": null,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate - Drain charge",
"symbol": "Qgd",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 18,
"max": null,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Reverse recovery time",
"symbol": "trr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 33.6,
"max": null,
"conditions": "IS = -15A, VGS = 0V, di/dt = 100A/μs (note *5)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Reverse recovery charge",
"symbol": "Qrr",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 32.6,
"max": null,
"conditions": "",
"source_page": 3,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"rs1l151attb1"
],
"discovery_pitch": "RS1L151ATTB1 (ROHM Semicon) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"rs1l151attb1.kicad_sym",
"rs1l151attb1.kicad_mod",
"rs1l151attb1.glb",
"rs1l151attb1.step",
"rs1l151attb1.lbr",
"docs/hero.png",
"docs/rs1l151attb1-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"rs1l151attb1-hero.glb",
"rs1l151attb1-hero.overlay.json",
"rs1l151attb1-etched.glb"
],
"visibility": {
"public": true
}
}