component
RS1L151ATTB1
Public Made by Adomby adom
ROHM Semicon MOSFETs, HSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRS1L151ATTB1
ROHM Semicon · MOSFETs · HSOP-8
RS1L151ATTB1 from ROHM Semicon, in a HSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source of the P-channel MOSFET; drain-source voltage rated -60V, continuous drain current ±56A at Tc = 25°C. |
| 2 | Source | passive | Source of the P-channel MOSFET, internally tied to the other source pins (1, 3). |
| 3 | Source | passive | Source of the P-channel MOSFET, internally tied to the other source pins (1, 2). |
| 4 | Gate | input | Gate of the P-channel MOSFET; gate-source voltage limited to ±20V, threshold -1.0V to -2.5V at ID = -1mA. |
| 5 | Drain | passive | Drain of the P-channel MOSFET; VDSS -60V, RDS(on) max 11.3mΩ at VGS = -10V, ID = -15A. |
| 6 | Drain | passive | Drain of the P-channel MOSFET, internally tied to the other drain pins (5, 7, 8). |
| 7 | Drain | passive | Drain of the P-channel MOSFET, internally tied to the other drain pins (5, 6, 8). |
| 8 | Drain | passive | Drain of the P-channel MOSFET, internally tied to the other drain pins (5, 6, 7). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | HSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | -60 | V | 1 | |||
| Continuous drain current (Tc = 25°C) | ID | -56 | 56 | A | Tc = 25°C | 1 | |
| Continuous drain current (Ta = 25°C) | ID | -15 | 15 | A | Ta = 25°C | 1 | |
| Pulsed drain current | IDP | -60 | 60 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche current, single pulse | IAS | -15 | A | L ≃ 0.1mH, VDD = -30V, RG = 25Ω, Starting Tj = 25℃ (note *3) | 1 | ||
| Avalanche energy, single pulse | EAS | 16 | mJ | L ≃ 0.1mH, VDD = -30V, RG = 25Ω, Starting Tj = 25℃ (note *3) | 1 | ||
| Power dissipation | PD | 40 | W | Tc = 25°C (note *1) | 1 | ||
| Power dissipation | PD | 3 | W | Mounted on a Cu board (40×40×0.8mm) (note *4) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - case | RthJC | 3.1 | ℃/W | Tc = 25℃, limited only by maximum temperature allowed (note *1) | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 41.7 | ℃/W | Mounted on a Cu board (40×40×0.8mm) (note *4) | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | -60 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -60V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 8.9 | 11.3 | mΩ | VGS = -10V, ID = -15A (note *5 pulsed) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 9.9 | 12.6 | mΩ | VGS = -4.5V, ID = -15A (note *5 pulsed) | 2 | |
| Forward Transfer Admittance | /Yfs/ | 25 | S | VDS = -5V, ID = -15A (note *5 pulsed) | 2 | ||
| Continuous forward current | IS | -2.5 | A | Ta = 25℃ | 3 | ||
| Pulse forward current | ISP | -60 | A | Pw ≤ 10μs, Duty cycle ≤ 1% (note *2) | 3 | ||
| Forward voltage | VSD | -1.2 | V | VGS = 0V, IS = -2.5A (note *5 pulsed) | 3 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | -22 | mV/℃ | ID = -1mA, referenced to 25℃ | 2 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | 3.7 | mV/℃ | ID = -1mA, referenced to 25℃ | 2 | ||
| Gate resistance | RG | 4.2 | Ω | f = 1MHz, open drain | 2 | ||
| Input capacitance | Ciss | 6900 | pF | VGS = 0V | 3 | ||
| Output capacitance | Coss | 455 | pF | VDS = -30V | 3 | ||
| Reverse transfer capacitance | Crss | 345 | pF | f = 1MHz | 3 | ||
| Turn - on delay time | td(on) | 22 | ns | VDD ⋍ -30V, VGS = -10V (note *5) | 3 | ||
| Rise time | tr | 70 | ns | ID = -7.5A (note *5) | 3 | ||
| Turn - off delay time | td(off) | 350 | ns | RL ⋍ 4Ω (note *5) | 3 | ||
| Fall time | tf | 220 | ns | RG = 10Ω (note *5) | 3 | ||
| Total gate charge | Qg | 130 | nC | VDD ⋍ -30V, ID = -15A, VGS = -10V (note *5) | 3 | ||
| Total gate charge | Qg | 59 | nC | VDD ⋍ -30V, ID = -15A, VGS = -4.5V (note *5) | 3 | ||
| Gate - Source charge | Qgs | 22 | nC | 3 | |||
| Gate - Drain charge | Qgd | 18 | nC | 3 | |||
| Reverse recovery time | trr | 33.6 | ns | IS = -15A, VGS = 0V, di/dt = 100A/μs (note *5) | 3 | ||
| Reverse recovery charge | Qrr | 32.6 | nC | 3 |
CAD (KiCad official)
- Symbol:
RS1L151ATTB1 - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm - 3D model: HSOP-8 (KiCad packages3D, STEP)
- 3D model files:
rs1l151attb1-etched.step/rs1l151attb1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs1l151attb1.step/rs1l151attb1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
fe5e8078a01a478f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).