# RS1L151ATTB1

**ROHM Semicon** · MOSFETs · HSOP-8

RS1L151ATTB1 from ROHM Semicon, in a HSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source of the P-channel MOSFET; drain-source voltage rated -60V, continuous drain current ±56A at Tc = 25°C. |
| 2 | Source | passive | Source of the P-channel MOSFET, internally tied to the other source pins (1, 3). |
| 3 | Source | passive | Source of the P-channel MOSFET, internally tied to the other source pins (1, 2). |
| 4 | Gate | input | Gate of the P-channel MOSFET; gate-source voltage limited to ±20V, threshold -1.0V to -2.5V at ID = -1mA. |
| 5 | Drain | passive | Drain of the P-channel MOSFET; VDSS -60V, RDS(on) max 11.3mΩ at VGS = -10V, ID = -15A. |
| 6 | Drain | passive | Drain of the P-channel MOSFET, internally tied to the other drain pins (5, 7, 8). |
| 7 | Drain | passive | Drain of the P-channel MOSFET, internally tied to the other drain pins (5, 6, 8). |
| 8 | Drain | passive | Drain of the P-channel MOSFET, internally tied to the other drain pins (5, 6, 7). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | HSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | -60 |  |  | V |  | 1 |
| Continuous drain current (Tc = 25°C) | ID | -56 |  | 56 | A | Tc = 25°C | 1 |
| Continuous drain current (Ta = 25°C) | ID | -15 |  | 15 | A | Ta = 25°C | 1 |
| Pulsed drain current | IDP | -60 |  | 60 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 |
| Gate - Source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Avalanche current, single pulse | IAS | -15 |  |  | A | L ≃ 0.1mH, VDD = -30V, RG = 25Ω, Starting Tj = 25℃ (note *3) | 1 |
| Avalanche energy, single pulse | EAS |  |  | 16 | mJ | L ≃ 0.1mH, VDD = -30V, RG = 25Ω, Starting Tj = 25℃ (note *3) | 1 |
| Power dissipation | PD |  |  | 40 | W | Tc = 25°C (note *1) | 1 |
| Power dissipation | PD |  |  | 3 | W | Mounted on a Cu board (40×40×0.8mm) (note *4) | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction - case | RthJC |  |  | 3.1 | ℃/W | Tc = 25℃, limited only by maximum temperature allowed (note *1) | 2 |
| Thermal resistance, junction - ambient | RthJA |  |  | 41.7 | ℃/W | Mounted on a Cu board (40×40×0.8mm) (note *4) | 2 |
| Drain - Source breakdown voltage | V(BR)DSS | -60 |  |  | V | VGS = 0V, ID = -1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | -1 | μA | VDS = -60V, VGS = 0V | 2 |
| Gate - Source leakage current | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | -1 |  | -2.5 | V | VDS = VGS, ID = -1mA | 2 |
| Static drain - source on - state resistance | RDS(on) |  | 8.9 | 11.3 | mΩ | VGS = -10V, ID = -15A (note *5 pulsed) | 2 |
| Static drain - source on - state resistance | RDS(on) |  | 9.9 | 12.6 | mΩ | VGS = -4.5V, ID = -15A (note *5 pulsed) | 2 |
| Forward Transfer Admittance | /Yfs/ | 25 |  |  | S | VDS = -5V, ID = -15A (note *5 pulsed) | 2 |
| Continuous forward current | IS |  |  | -2.5 | A | Ta = 25℃ | 3 |
| Pulse forward current | ISP |  |  | -60 | A | Pw ≤ 10μs, Duty cycle ≤ 1% (note *2) | 3 |
| Forward voltage | VSD |  |  | -1.2 | V | VGS = 0V, IS = -2.5A (note *5 pulsed) | 3 |
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj |  | -22 |  | mV/℃ | ID = -1mA, referenced to 25℃ | 2 |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj |  | 3.7 |  | mV/℃ | ID = -1mA, referenced to 25℃ | 2 |
| Gate resistance | RG |  | 4.2 |  | Ω | f = 1MHz, open drain | 2 |
| Input capacitance | Ciss |  | 6900 |  | pF | VGS = 0V | 3 |
| Output capacitance | Coss |  | 455 |  | pF | VDS = -30V | 3 |
| Reverse transfer capacitance | Crss |  | 345 |  | pF | f = 1MHz | 3 |
| Turn - on delay time | td(on) |  | 22 |  | ns | VDD ⋍ -30V, VGS = -10V (note *5) | 3 |
| Rise time | tr |  | 70 |  | ns | ID = -7.5A (note *5) | 3 |
| Turn - off delay time | td(off) |  | 350 |  | ns | RL ⋍ 4Ω (note *5) | 3 |
| Fall time | tf |  | 220 |  | ns | RG = 10Ω (note *5) | 3 |
| Total gate charge | Qg |  | 130 |  | nC | VDD ⋍ -30V, ID = -15A, VGS = -10V (note *5) | 3 |
| Total gate charge | Qg |  | 59 |  | nC | VDD ⋍ -30V, ID = -15A, VGS = -4.5V (note *5) | 3 |
| Gate - Source charge | Qgs |  | 22 |  | nC |  | 3 |
| Gate - Drain charge | Qgd |  | 18 |  | nC |  | 3 |
| Reverse recovery time | trr |  | 33.6 |  | ns | IS = -15A, VGS = 0V, di/dt = 100A/μs (note *5) | 3 |
| Reverse recovery charge | Qrr |  | 32.6 |  | nC |  | 3 |

## CAD (KiCad official)

- Symbol: `RS1L151ATTB1`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm`
- 3D model: HSOP-8 (KiCad packages3D, STEP)
- 3D model files: `rs1l151attb1-etched.step` / `rs1l151attb1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs1l151attb1.step` / `rs1l151attb1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590275055130750976) (13 pp, sha256 `fe5e8078a01a478f`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rs1l151attb1-datasheet.pdf)