# RS1G260MNTB

**ROHM Semicon** · MOSFETs · HSOP-8

RS1G260MNTB from ROHM Semicon, in a HSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the Nch MOSFET, connected internally with pins 2 and 3. |
| 2 | Source | passive | Source terminal of the Nch MOSFET, connected internally with pins 1 and 3. |
| 3 | Source | passive | Source terminal of the Nch MOSFET, connected internally with pins 1 and 2. |
| 4 | Gate | input | Gate terminal with a maximum gate-source voltage of ±20 V and threshold of 1.0 to 2.5 V. |
| 5 | Drain | passive | Drain terminal with a 40 V maximum drain-source voltage, connected internally with pins 6, 7 and 8. |
| 6 | Drain | passive | Drain terminal with a 40 V maximum drain-source voltage, connected internally with pins 5, 7 and 8. |
| 7 | Drain | passive | Drain terminal with a 40 V maximum drain-source voltage, connected internally with pins 5, 6 and 8. |
| 8 | Drain | passive | Drain terminal with a 40 V maximum drain-source voltage, connected internally with pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | HSOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS |  |  | 40 | V | Ta = 25°C | 1 |
| Continuous drain current | ID | -80 |  | 80 | A | Tc = 25°C | 1 |
| Continuous drain current | ID | -26 |  | 26 | A | Ta = 25°C | 1 |
| Pulsed drain current | IDP | -104 |  | 104 | A | Pw≦10μs, Duty cycle≦1% | 1 |
| Gate-Source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Avalanche current, single pulse | IAS |  |  | 26 | A | L ≒ 0.1mH, VDD = 20V, RG = 25Ω, Starting Tj = 25°C | 1 |
| Avalanche energy, single pulse | EAS |  |  | 52 | mJ | L ≒ 0.1mH, VDD = 20V, RG = 25Ω, Starting Tj = 25°C | 1 |
| Power dissipation | PD |  |  | 35 | W | Tc=25°C | 1 |
| Power dissipation | PD |  |  | 3 | W | Mounted on a Cu board (40×40×0.8mm) | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction-case | RthJC |  |  | 3.57 | ℃/W | Tc=25℃ | 2 |
| Thermal resistance, junction-ambient | RthJA |  |  | 41.7 | ℃/W | Mounted on a Cu board (40×40×0.8mm) | 2 |
| Drain-Source breakdown voltage | V(BR)DSS | 40 |  |  | V | VGS = 0V, ID = 1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VDS = 40V, VGS = 0V | 2 |
| Gate-Source leakage current | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 1 |  | 2.5 | V | VDS = 10V, ID = 1mA | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 2.4 | 3.3 | mΩ | VGS = 10V, ID = 26A | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 3.2 | 4.4 | mΩ | VGS = 4.5V, ID = 26A | 2 |
| Forward Transfer Admittance | /Yfs/ | 20 |  |  | S | VDS = 10V, ID = 26A | 2 |
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj |  | 27.3 |  | mV/℃ | ID = 1mA, referenced to 25℃ | 2 |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj |  | -4.6 |  | mV/℃ | ID = 1mA, referenced to 25℃ | 2 |
| Gate resistance | RG |  | 2.2 |  | Ω | f=1MHz, open drain | 2 |
| Continuous forward current (body diode) | IS |  |  | 2.5 | A | Ta = 25℃ | 3 |
| Pulse forward current (body diode) | ISP |  |  | 104 | A | Pw≦10μs, Duty cycle≦1% | 3 |
| Forward voltage (body diode) | VSD |  |  | 1.2 | V | VGS = 0V, IS = 2.5A | 3 |
| Input capacitance | Ciss |  | 2988 |  | pF | VGS = 0V, VDS = 20V, f = 1MHz | 3 |
| Output capacitance | Coss |  | 662 |  | pF | VGS = 0V, VDS = 20V, f = 1MHz | 3 |
| Reverse transfer capacitance | Crss |  | 126 |  | pF | VGS = 0V, VDS = 20V, f = 1MHz | 3 |
| Turn-on delay time | td(on) |  | 25.1 |  | ns | VDD ≒ 20V, VGS = 10V, ID = 13A, RL ≒ 1.5Ω, RG = 10Ω | 3 |
| Rise time | tr |  | 15.2 |  | ns | VDD ≒ 20V, VGS = 10V, ID = 13A, RL ≒ 1.5Ω, RG = 10Ω | 3 |
| Turn-off delay time | td(off) |  | 80 |  | ns | VDD ≒ 20V, VGS = 10V, ID = 13A, RL ≒ 1.5Ω, RG = 10Ω | 3 |
| Fall time | tf |  | 11.8 |  | ns | VDD ≒ 20V, VGS = 10V, ID = 13A, RL ≒ 1.5Ω, RG = 10Ω | 3 |
| Total gate charge | Qg |  | 44 |  | nC | VDD ≒ 20V, ID = 26A, VGS = 10V | 3 |
| Total gate charge | Qg |  | 21 |  | nC | VDD ≒ 20V, ID = 26A, VGS = 4.5V | 3 |
| Gate-Source charge | Qgs |  | 8.7 |  | nC | VDD ≒ 20V, ID = 26A | 3 |
| Gate-Drain charge | Qgd |  | 5.2 |  | nC | VDD ≒ 20V, ID = 26A | 3 |

## CAD (KiCad official)

- Symbol: `RS1G260MNTB`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm`
- 3D model: HSOP-8 (KiCad packages3D, STEP)
- 3D model files: `rs1g260mntb-etched.step` / `rs1g260mntb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs1g260mntb.step` / `rs1g260mntb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/rs1g260mntb-datasheet.pdf) (13 pp, sha256 `b3395cb0dc620adf`, retrieved 2026-11-02, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rs1g260mntb-datasheet.pdf)