component

RS1G260MNTB

Public Made by Adom

by adom

ROHM Semicon MOSFETs, HSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorrs1g260mntbfactory-2.0.0extractor-text

Verified RS1G260MNTB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: RS1G260MNTB · HSOP-8 · 9 pins
  • ✓copper: 9 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 13-page datasheet
  • ✓distributor: lcsc C6201506, digikey RS1G260MNTBTR-ND, mouser 755-RS1G260MNTB
  • ✓family: SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-mottp2p6/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ rs1g260mntb.kicad_sym✓ rs1g260mntb.kicad_mod✓ rs1g260mntb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers rs1g260mntb: viewers · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
rs1g260mntb-etched.glb Publish 0.1.0 · Ray 4d ago
rs1g260mntb-etched.step rs1g260mntb: factory component page (tier=mfr) · Ray 4d ago
rs1g260mntb-hero.glb rs1g260mntb: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
rs1g260mntb-hero.overlay.json Publish 0.1.0 · Ray 4d ago
rs1g260mntb.glb Publish 0.1.0 · Ray 4d ago
rs1g260mntb.kicad_mod Publish 0.1.0 · Ray 4d ago
rs1g260mntb.kicad_sym Publish 0.1.0 · Ray 4d ago
rs1g260mntb.lbr Publish 0.1.0 · Ray 4d ago
rs1g260mntb.step Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier mfr, 9 pins · Ray 4d ago

RS1G260MNTB

ROHM Semicon · MOSFETs · HSOP-8

RS1G260MNTB from ROHM Semicon, in a HSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the Nch MOSFET, connected internally with pins 2 and 3.
2 Source passive Source terminal of the Nch MOSFET, connected internally with pins 1 and 3.
3 Source passive Source terminal of the Nch MOSFET, connected internally with pins 1 and 2.
4 Gate input Gate terminal with a maximum gate-source voltage of ±20 V and threshold of 1.0 to 2.5 V.
5 Drain passive Drain terminal with a 40 V maximum drain-source voltage, connected internally with pins 6, 7 and 8.
6 Drain passive Drain terminal with a 40 V maximum drain-source voltage, connected internally with pins 5, 7 and 8.
7 Drain passive Drain terminal with a 40 V maximum drain-source voltage, connected internally with pins 5, 6 and 8.
8 Drain passive Drain terminal with a 40 V maximum drain-source voltage, connected internally with pins 5, 6 and 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package HSOP-8
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS 40 V Ta = 25°C 1
Continuous drain current ID -80 80 A Tc = 25°C 1
Continuous drain current ID -26 26 A Ta = 25°C 1
Pulsed drain current IDP -104 104 A Pw≦10μs, Duty cycle≦1% 1
Gate-Source voltage VGSS -20 20 V 1
Avalanche current, single pulse IAS 26 A L ≒ 0.1mH, VDD = 20V, RG = 25Ω, Starting Tj = 25°C 1
Avalanche energy, single pulse EAS 52 mJ L ≒ 0.1mH, VDD = 20V, RG = 25Ω, Starting Tj = 25°C 1
Power dissipation PD 35 W Tc=25°C 1
Power dissipation PD 3 W Mounted on a Cu board (40×40×0.8mm) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction-case RthJC 3.57 ℃/W Tc=25℃ 2
Thermal resistance, junction-ambient RthJA 41.7 ℃/W Mounted on a Cu board (40×40×0.8mm) 2
Drain-Source breakdown voltage V(BR)DSS 40 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 1 μA VDS = 40V, VGS = 0V 2
Gate-Source leakage current IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 2.5 V VDS = 10V, ID = 1mA 2
Static drain-source on-state resistance RDS(on) 2.4 3.3 mΩ VGS = 10V, ID = 26A 2
Static drain-source on-state resistance RDS(on) 3.2 4.4 mΩ VGS = 4.5V, ID = 26A 2
Forward Transfer Admittance /Yfs/ 20 S VDS = 10V, ID = 26A 2
Breakdown voltage temperature coefficient ΔV(BR)DSS/ΔTj 27.3 mV/℃ ID = 1mA, referenced to 25℃ 2
Gate threshold voltage temperature coefficient ΔVGS(th)/ΔTj -4.6 mV/℃ ID = 1mA, referenced to 25℃ 2
Gate resistance RG 2.2 Ω f=1MHz, open drain 2
Continuous forward current (body diode) IS 2.5 A Ta = 25℃ 3
Pulse forward current (body diode) ISP 104 A Pw≦10μs, Duty cycle≦1% 3
Forward voltage (body diode) VSD 1.2 V VGS = 0V, IS = 2.5A 3
Input capacitance Ciss 2988 pF VGS = 0V, VDS = 20V, f = 1MHz 3
Output capacitance Coss 662 pF VGS = 0V, VDS = 20V, f = 1MHz 3
Reverse transfer capacitance Crss 126 pF VGS = 0V, VDS = 20V, f = 1MHz 3
Turn-on delay time td(on) 25.1 ns VDD ≒ 20V, VGS = 10V, ID = 13A, RL ≒ 1.5Ω, RG = 10Ω 3
Rise time tr 15.2 ns VDD ≒ 20V, VGS = 10V, ID = 13A, RL ≒ 1.5Ω, RG = 10Ω 3
Turn-off delay time td(off) 80 ns VDD ≒ 20V, VGS = 10V, ID = 13A, RL ≒ 1.5Ω, RG = 10Ω 3
Fall time tf 11.8 ns VDD ≒ 20V, VGS = 10V, ID = 13A, RL ≒ 1.5Ω, RG = 10Ω 3
Total gate charge Qg 44 nC VDD ≒ 20V, ID = 26A, VGS = 10V 3
Total gate charge Qg 21 nC VDD ≒ 20V, ID = 26A, VGS = 4.5V 3
Gate-Source charge Qgs 8.7 nC VDD ≒ 20V, ID = 26A 3
Gate-Drain charge Qgd 5.2 nC VDD ≒ 20V, ID = 26A 3

CAD (KiCad official)

  • Symbol: RS1G260MNTB
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm
  • 3D model: HSOP-8 (KiCad packages3D, STEP)
  • 3D model files: rs1g260mntb-etched.step / rs1g260mntb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs1g260mntb.step / rs1g260mntb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (13 pp, sha256 b3395cb0dc620adf, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF