component
RS150N160T
Public Made by Adomby adom
REASUNOS MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RS150N160T
REASUNOS · MOSFETs · TO-220
RS150N160T from REASUNOS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-to-source voltage of ±20 V and threshold of 2.5 V to 4.5 V. |
| 2 | D | passive | Drain; rated for 150 V drain-to-source and 160 A continuous drain current at TC=25℃, and also connected to the mounting tab. |
| 3 | S | passive | Source; current return path of the N-channel MOSFET, with 160 A maximum continuous diode source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 150 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 160 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 112 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 600 | A | 1 | |||
| Power Dissipation | PD | 425 | W | Tc=25℃ | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 540 | mJ | L=0.3mH, IS=60A, RG=25Ω, Tj=25℃ | 1 | ||
| Maximum Soldering Temperature, Leads | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 | ||
| Maximum Soldering Temperature, Package Body | TPKG | 260 | ℃ | Package body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.42 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 46 | ℃/W | 1 cubic foot chamber, free air | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=120V, VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 5.2 | 6.3 | mΩ | VGS=10V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2.5 | 4.5 | V | VGS=VDS, ID=250µA | 2 | |
| Continuous Source Current | IS | 160 | A | Integral pn-diode in MOSFET | 3 | ||
| Maximum Pulsed Current | ISM | 600 | A | Integral pn-diode in MOSFET | 3 | ||
| Diode Forward Voltage | VSD | 1 | V | IS=1A, VGS=0V | 3 | ||
| Turn-on Delay Time | td(ON) | 19 | nS | VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V | 2 | ||
| Rise Time | trise | 31 | nS | VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V | 2 | ||
| Turn-off Delay Time | td(OFF) | 52 | nS | VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V | 2 | ||
| Fall Time | tfall | 40 | nS | VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V | 2 | ||
| Input Capacitance | Ciss | 4300 | pF | VGS=0V, VDS=75V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 530 | pF | VGS=0V, VDS=75V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 7.5 | pF | VGS=0V, VDS=75V, f=1MHz | 3 | ||
| Total Gate Charge | Qg | 68 | nC | VDS=75V, ID=20A, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 15 | nC | VDS=75V, ID=20A, VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 14 | nC | VDS=75V, ID=20A, VGS=10V | 3 | ||
| Reverse Recovery Time | trr | 100 | nS | VGS=0V, IS=15A, di/dt=100A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 150 | nC | VGS=0V, IS=15A, di/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
RS150N160T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
rs150n160t-etched.step/rs150n160t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs150n160t.step/rs150n160t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (9 pp, sha256
dc2143618e0169fd, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RS150N160T
**REASUNOS** · MOSFETs · TO-220
RS150N160T from REASUNOS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-to-source voltage of ±20 V and threshold of 2.5 V to 4.5 V. |
| 2 | D | passive | Drain; rated for 150 V drain-to-source and 160 A continuous drain current at TC=25℃, and also connected to the mounting tab. |
| 3 | S | passive | Source; current return path of the N-channel MOSFET, with 160 A maximum continuous diode source current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 150 | V | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 160 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 112 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 600 | A | | 1 |
| Power Dissipation | PD | | | 425 | W | Tc=25℃ | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 540 | mJ | L=0.3mH, IS=60A, RG=25Ω, Tj=25℃ | 1 |
| Maximum Soldering Temperature, Leads | TL | | | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 |
| Maximum Soldering Temperature, Package Body | TPKG | | | 260 | ℃ | Package body for 10 seconds | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 0.42 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 46 | ℃/W | 1 cubic foot chamber, free air | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | 150 | | | V | VGS=0V, ID=250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=120V, VGS=0V | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 5.2 | 6.3 | mΩ | VGS=10V, ID=20A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2.5 | | 4.5 | V | VGS=VDS, ID=250µA | 2 |
| Continuous Source Current | IS | | | 160 | A | Integral pn-diode in MOSFET | 3 |
| Maximum Pulsed Current | ISM | | | 600 | A | Integral pn-diode in MOSFET | 3 |
| Diode Forward Voltage | VSD | | | 1 | V | IS=1A, VGS=0V | 3 |
| Turn-on Delay Time | td(ON) | | 19 | | nS | VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V | 2 |
| Rise Time | trise | | 31 | | nS | VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V | 2 |
| Turn-off Delay Time | td(OFF) | | 52 | | nS | VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V | 2 |
| Fall Time | tfall | | 40 | | nS | VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V | 2 |
| Input Capacitance | Ciss | | 4300 | | pF | VGS=0V, VDS=75V, f=1MHz | 3 |
| Output Capacitance | Coss | | 530 | | pF | VGS=0V, VDS=75V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 7.5 | | pF | VGS=0V, VDS=75V, f=1MHz | 3 |
| Total Gate Charge | Qg | | 68 | | nC | VDS=75V, ID=20A, VGS=10V | 3 |
| Gate-to-Source Charge | Qgs | | 15 | | nC | VDS=75V, ID=20A, VGS=10V | 3 |
| Gate-to-Drain (Miller) Charge | Qgd | | 14 | | nC | VDS=75V, ID=20A, VGS=10V | 3 |
| Reverse Recovery Time | trr | | 100 | | nS | VGS=0V, IS=15A, di/dt=100A/µs | 3 |
| Reverse Recovery Charge | Qrr | | 150 | | nC | VGS=0V, IS=15A, di/dt=100A/µs | 3 |
## CAD (KiCad official)
- Symbol: `RS150N160T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `rs150n160t-etched.step` / `rs150n160t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs150n160t.step` / `rs150n160t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [REASUNOS datasheet](docs/rs150n160t-datasheet.pdf) (9 pp, sha256 `dc2143618e0169fd`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rs150n160t-datasheet.pdf)