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RS150N160T

Public Made by Adom

by adom

REASUNOS MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RS150N160T

REASUNOS · MOSFETs · TO-220

RS150N160T from REASUNOS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with absolute maximum gate-to-source voltage of ±20 V and threshold of 2.5 V to 4.5 V.
2 D passive Drain; rated for 150 V drain-to-source and 160 A continuous drain current at TC=25℃, and also connected to the mounting tab.
3 S passive Source; current return path of the N-channel MOSFET, with 160 A maximum continuous diode source current.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 150 V Tc=25℃ 1
Continuous Drain Current ID 160 A TC=25℃ 1
Continuous Drain Current ID 112 A TC=100℃ 1
Pulsed Drain Current IDM 600 A 1
Power Dissipation PD 425 W Tc=25℃ 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 540 mJ L=0.3mH, IS=60A, RG=25Ω, Tj=25℃ 1
Maximum Soldering Temperature, Leads TL 300 ℃ Leads at 0.063in(1.6mm) from case for 10 seconds 1
Maximum Soldering Temperature, Package Body TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 0.42 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 46 ℃/W 1 cubic foot chamber, free air 2
Drain-to-Source Breakdown Voltage BVDSS 150 V VGS=0V, ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=120V, VGS=0V 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V, VDS=0V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 5.2 6.3 mΩ VGS=10V, ID=20A 2
Gate Threshold Voltage VGS(TH) 2.5 4.5 V VGS=VDS, ID=250µA 2
Continuous Source Current IS 160 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 600 A Integral pn-diode in MOSFET 3
Diode Forward Voltage VSD 1 V IS=1A, VGS=0V 3
Turn-on Delay Time td(ON) 19 nS VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V 2
Rise Time trise 31 nS VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V 2
Turn-off Delay Time td(OFF) 52 nS VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V 2
Fall Time tfall 40 nS VDS=75V, RL=3.5Ω, RG=6Ω, VGS=10V 2
Input Capacitance Ciss 4300 pF VGS=0V, VDS=75V, f=1MHz 3
Output Capacitance Coss 530 pF VGS=0V, VDS=75V, f=1MHz 3
Reverse Transfer Capacitance Crss 7.5 pF VGS=0V, VDS=75V, f=1MHz 3
Total Gate Charge Qg 68 nC VDS=75V, ID=20A, VGS=10V 3
Gate-to-Source Charge Qgs 15 nC VDS=75V, ID=20A, VGS=10V 3
Gate-to-Drain (Miller) Charge Qgd 14 nC VDS=75V, ID=20A, VGS=10V 3
Reverse Recovery Time trr 100 nS VGS=0V, IS=15A, di/dt=100A/µs 3
Reverse Recovery Charge Qrr 150 nC VGS=0V, IS=15A, di/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: RS150N160T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: rs150n160t-etched.step / rs150n160t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs150n160t.step / rs150n160t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (9 pp, sha256 dc2143618e0169fd, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF