component

RS100N85G

Public Made by Adom

by adom

REASUNOS MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsrs100n85gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers rs100n85g: viewers · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago
rs100n85g-etched.glb Publish 0.1.0 · Ray 16d ago
rs100n85g-etched.step rs100n85g: factory component page (tier=lcsc) · Ray 16d ago
rs100n85g-hero.glb rs100n85g: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
rs100n85g-hero.overlay.json Publish 0.1.0 · Ray 16d ago
rs100n85g.glb Publish 0.1.0 · Ray 16d ago
rs100n85g.kicad_mod Publish 0.1.0 · Ray 16d ago
rs100n85g.kicad_sym Publish 0.1.0 · Ray 16d ago
rs100n85g.lbr Publish 0.1.0 · Ray 16d ago
rs100n85g.step Publish 0.1.0 · Ray 16d ago

RS100N85G

REASUNOS · MOSFETs · DFN5x6-8

RS100N85G from REASUNOS, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, connected to pins 2 and 3; continuous drain current is rated 85 A at TC=25℃.
2 S passive Source of the N-channel MOSFET, connected to pins 1 and 3; continuous drain current is rated 85 A at TC=25℃.
3 S passive Source of the N-channel MOSFET, connected to pins 1 and 2; continuous drain current is rated 85 A at TC=25℃.
4 G input Gate of the N-channel MOSFET, with gate-to-source voltage limited to ±20 V and threshold of 1 V to 2.5 V at 250 µA.
5 D passive Drain of the N-channel MOSFET, connected to pins 6-8 and the exposed drain pad; drain-to-source voltage is rated 100 V.
6 D passive Drain of the N-channel MOSFET, connected to pins 5, 7, 8 and the exposed drain pad; drain-to-source voltage is rated 100 V.
7 D passive Drain of the N-channel MOSFET, connected to pins 5, 6, 8 and the exposed drain pad; drain-to-source voltage is rated 100 V.
8 D passive Drain of the N-channel MOSFET, connected to pins 5-7 and the exposed drain pad; drain-to-source voltage is rated 100 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer REASUNOS
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 100 V 1
Continuous Drain Current ID 85 A TC=25℃ 1
Continuous Drain Current ID 55 A TC=100℃ 1
Pulsed Drain Current IDM 316 A Note*1 1
Power Dissipation PD 76 W 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 108 mJ L = 0.5mH, VDD = 50V, RG = 25 Ω,TC=25℃ 1
Maximum Temperature for Soldering, leads TL 300 ℃ Leads at 0.063in(1.6mm) from Case for 10 seconds 1
Maximum Temperature for Soldering, package body TPKG 260 ℃ Package Body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 1.65 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Drain-to-Source Breakdown Voltage BVDSS 100 V VGS=0V,ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=80V,VGS=0V 2
Gate-to-Source Forward Leakage Current IGSS 100 nA VGS=20V, VDS=0V 2
Gate-to-Source Reverse Leakage Current IGSS -100 nA VGS=-20V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 6 7.5 mΩ VGS=10V,ID=20A 2
Static Drain-to-Source On-Resistance RDS(on) 9 11.5 mΩ VGS=4.5V,ID=10A 2
Gate Threshold Voltage VGS(TH) 1 2.5 V VGS=VDS,ID=250µA 2
Continuous Source Current IS 85 A 3
Maximum Pulsed Current ISM 316 A 3
Diode Forward Voltage VSD 1.2 V IS=20A,VGS=0V 3

CAD (KiCad official)

  • Symbol: RS100N85G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: rs100n85g-etched.step / rs100n85g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs100n85g.step / rs100n85g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (9 pp, sha256 f53681f11cf50f3f, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF