component
RS100N85G
Public Made by Adomby adom
REASUNOS MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRS100N85G
REASUNOS · MOSFETs · DFN5x6-8
RS100N85G from REASUNOS, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, connected to pins 2 and 3; continuous drain current is rated 85 A at TC=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, connected to pins 1 and 3; continuous drain current is rated 85 A at TC=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, connected to pins 1 and 2; continuous drain current is rated 85 A at TC=25℃. |
| 4 | G | input | Gate of the N-channel MOSFET, with gate-to-source voltage limited to ±20 V and threshold of 1 V to 2.5 V at 250 µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, connected to pins 6-8 and the exposed drain pad; drain-to-source voltage is rated 100 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, connected to pins 5, 7, 8 and the exposed drain pad; drain-to-source voltage is rated 100 V. |
| 7 | D | passive | Drain of the N-channel MOSFET, connected to pins 5, 6, 8 and the exposed drain pad; drain-to-source voltage is rated 100 V. |
| 8 | D | passive | Drain of the N-channel MOSFET, connected to pins 5-7 and the exposed drain pad; drain-to-source voltage is rated 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V | 1 | |||
| Continuous Drain Current | ID | 85 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 55 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 316 | A | Note*1 | 1 | ||
| Power Dissipation | PD | 76 | W | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 108 | mJ | L = 0.5mH, VDD = 50V, RG = 25 Ω,TC=25℃ | 1 | ||
| Maximum Temperature for Soldering, leads | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from Case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering, package body | TPKG | 260 | ℃ | Package Body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 1.65 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V,ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=80V,VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage Current | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 6 | 7.5 | mΩ | VGS=10V,ID=20A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 9 | 11.5 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 2.5 | V | VGS=VDS,ID=250µA | 2 | |
| Continuous Source Current | IS | 85 | A | 3 | |||
| Maximum Pulsed Current | ISM | 316 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=20A,VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
RS100N85G - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
rs100n85g-etched.step/rs100n85g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs100n85g.step/rs100n85g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (9 pp, sha256
f53681f11cf50f3f, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).