component
RS100N190S
Public Made by Adomby adom
REASUNOS MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RS100N190S
REASUNOS · MOSFETs · TO-263
RS100N190S from REASUNOS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives VGS of ±20 V maximum and a gate threshold of 2.0 to 4.0 V at ID=250µA. |
| 2 | D | passive | Drain; the centre lead is trimmed to a short stub and connects to the metal tab, which is the drain (VDSS 100 V, ID 190 A at TC=25℃). |
| 3 | S | passive | Source; the continuous source current through the body diode is 190 A, with 680 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V,ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=80V,VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V,VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V,VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 3 | 3.6 | mΩ | VGS=10V,ID=20A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VGS=VDS,ID=250µA | 2 | |
| Continuous Source Current | IS | 190 | A | Integral pn-diode in MOSFET | 3 | ||
| Maximum Pulsed Source Current | ISM | 680 | A | Integral pn-diode in MOSFET | 3 | ||
| Diode Forward Voltage | VSD | 1 | V | IS=1A,VGS=0V | 3 | ||
| Drain-to-Source Voltage | VDSS | 100 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 190 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 130 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 680 | A | 1 | |||
| Power Dissipation | PD | 310 | W | Tc=25℃ | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | ±20 V | 1 | |
| Single Pulse Avalanche Energy | EAS | 725 | mJ | L=0.3mH,IS=45A,RG=25Ω,Tj=25℃ | 1 | ||
| Maximum Soldering Temperature, Leads | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 | ||
| Maximum Soldering Temperature, Package Body | TPKG | 260 | ℃ | Package body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.4 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 45 | ℃/W | 1 cubic foot chamber, free air | 2 | ||
| Turn-on Delay Time | td(ON) | 21 | nS | VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V | 2 | ||
| Rise Time | trise | 35 | nS | VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V | 2 | ||
| Turn-off Delay Time | td(OFF) | 50 | nS | VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V | 2 | ||
| Fall Time | tfall | 30 | nS | VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V | 2 | ||
| Input Capacitance | Ciss | 4790 | pF | VGS=0V,VDS=50V,f=1MHz | 3 | ||
| Output Capacitance | Coss | 900 | pF | VGS=0V,VDS=50V,f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 18 | pF | VGS=0V,VDS=50V,f=1MHz | 3 | ||
| Total Gate Charge | Qg | 83 | nC | VDS=50V,ID=20A,VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 24 | nC | VDS=50V,ID=20A,VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 26 | nC | VDS=50V,ID=20A,VGS=10V | 3 | ||
| Reverse Recovery Time | trr | 70 | nS | VGS=0V,IS=20A,di/dt=100A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 125 | nC | VGS=0V,IS=20A,di/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
RS100N190S - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
rs100n190s-etched.step/rs100n190s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs100n190s.step/rs100n190s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (9 pp, sha256
d467f7398a9db222, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RS100N190S
**REASUNOS** · MOSFETs · TO-263
RS100N190S from REASUNOS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives VGS of ±20 V maximum and a gate threshold of 2.0 to 4.0 V at ID=250µA. |
| 2 | D | passive | Drain; the centre lead is trimmed to a short stub and connects to the metal tab, which is the drain (VDSS 100 V, ID 190 A at TC=25℃). |
| 3 | S | passive | Source; the continuous source current through the body diode is 190 A, with 680 A pulsed. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V,ID=250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=80V,VGS=0V | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V,VDS=0V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | -100 | | | nA | VGS=-20V,VDS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 3 | 3.6 | mΩ | VGS=10V,ID=20A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VGS=VDS,ID=250µA | 2 |
| Continuous Source Current | IS | | | 190 | A | Integral pn-diode in MOSFET | 3 |
| Maximum Pulsed Source Current | ISM | | | 680 | A | Integral pn-diode in MOSFET | 3 |
| Diode Forward Voltage | VSD | | | 1 | V | IS=1A,VGS=0V | 3 |
| Drain-to-Source Voltage | VDSS | | | 100 | V | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 190 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 130 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 680 | A | | 1 |
| Power Dissipation | PD | | | 310 | W | Tc=25℃ | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | ±20 V | 1 |
| Single Pulse Avalanche Energy | EAS | | | 725 | mJ | L=0.3mH,IS=45A,RG=25Ω,Tj=25℃ | 1 |
| Maximum Soldering Temperature, Leads | TL | | | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 |
| Maximum Soldering Temperature, Package Body | TPKG | | | 260 | ℃ | Package body for 10 seconds | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | 0.4 | | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for peak junction temperature of +150℃ | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 45 | | ℃/W | 1 cubic foot chamber, free air | 2 |
| Turn-on Delay Time | td(ON) | | 21 | | nS | VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V | 2 |
| Rise Time | trise | | 35 | | nS | VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V | 2 |
| Turn-off Delay Time | td(OFF) | | 50 | | nS | VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V | 2 |
| Fall Time | tfall | | 30 | | nS | VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V | 2 |
| Input Capacitance | Ciss | | 4790 | | pF | VGS=0V,VDS=50V,f=1MHz | 3 |
| Output Capacitance | Coss | | 900 | | pF | VGS=0V,VDS=50V,f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 18 | | pF | VGS=0V,VDS=50V,f=1MHz | 3 |
| Total Gate Charge | Qg | | 83 | | nC | VDS=50V,ID=20A,VGS=10V | 3 |
| Gate-to-Source Charge | Qgs | | 24 | | nC | VDS=50V,ID=20A,VGS=10V | 3 |
| Gate-to-Drain (Miller) Charge | Qgd | | 26 | | nC | VDS=50V,ID=20A,VGS=10V | 3 |
| Reverse Recovery Time | trr | | 70 | | nS | VGS=0V,IS=20A,di/dt=100A/µs | 3 |
| Reverse Recovery Charge | Qrr | | 125 | | nC | VGS=0V,IS=20A,di/dt=100A/µs | 3 |
## CAD (KiCad official)
- Symbol: `RS100N190S`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `rs100n190s-etched.step` / `rs100n190s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs100n190s.step` / `rs100n190s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [REASUNOS datasheet](docs/rs100n190s-datasheet.pdf) (9 pp, sha256 `d467f7398a9db222`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rs100n190s-datasheet.pdf)