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RS100N190S

Public Made by Adom

by adom

REASUNOS MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RS100N190S

REASUNOS · MOSFETs · TO-263

RS100N190S from REASUNOS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the datasheet gives VGS of ±20 V maximum and a gate threshold of 2.0 to 4.0 V at ID=250µA.
2 D passive Drain; the centre lead is trimmed to a short stub and connects to the metal tab, which is the drain (VDSS 100 V, ID 190 A at TC=25℃).
3 S passive Source; the continuous source current through the body diode is 190 A, with 680 A pulsed.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 100 V VGS=0V,ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=80V,VGS=0V 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V,VDS=0V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V,VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 3 3.6 mΩ VGS=10V,ID=20A 2
Gate Threshold Voltage VGS(TH) 2 4 V VGS=VDS,ID=250µA 2
Continuous Source Current IS 190 A Integral pn-diode in MOSFET 3
Maximum Pulsed Source Current ISM 680 A Integral pn-diode in MOSFET 3
Diode Forward Voltage VSD 1 V IS=1A,VGS=0V 3
Drain-to-Source Voltage VDSS 100 V Tc=25℃ 1
Continuous Drain Current ID 190 A TC=25℃ 1
Continuous Drain Current ID 130 A TC=100℃ 1
Pulsed Drain Current IDM 680 A 1
Power Dissipation PD 310 W Tc=25℃ 1
Gate-to-Source Voltage VGS -20 20 V ±20 V 1
Single Pulse Avalanche Energy EAS 725 mJ L=0.3mH,IS=45A,RG=25Ω,Tj=25℃ 1
Maximum Soldering Temperature, Leads TL 300 ℃ Leads at 0.063in(1.6mm) from case for 10 seconds 1
Maximum Soldering Temperature, Package Body TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 0.4 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 45 ℃/W 1 cubic foot chamber, free air 2
Turn-on Delay Time td(ON) 21 nS VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V 2
Rise Time trise 35 nS VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V 2
Turn-off Delay Time td(OFF) 50 nS VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V 2
Fall Time tfall 30 nS VDS=50V,RL=2.5Ω,RG=3Ω,VGS=10V 2
Input Capacitance Ciss 4790 pF VGS=0V,VDS=50V,f=1MHz 3
Output Capacitance Coss 900 pF VGS=0V,VDS=50V,f=1MHz 3
Reverse Transfer Capacitance Crss 18 pF VGS=0V,VDS=50V,f=1MHz 3
Total Gate Charge Qg 83 nC VDS=50V,ID=20A,VGS=10V 3
Gate-to-Source Charge Qgs 24 nC VDS=50V,ID=20A,VGS=10V 3
Gate-to-Drain (Miller) Charge Qgd 26 nC VDS=50V,ID=20A,VGS=10V 3
Reverse Recovery Time trr 70 nS VGS=0V,IS=20A,di/dt=100A/µs 3
Reverse Recovery Charge Qrr 125 nC VGS=0V,IS=20A,di/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: RS100N190S
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: rs100n190s-etched.step / rs100n190s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs100n190s.step / rs100n190s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (9 pp, sha256 d467f7398a9db222, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF