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RS100N120S

REASUNOS · MOSFETs · TO-263

RS100N120S from REASUNOS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with a gate-to-source voltage rating of ±20 V and a 2 to 4 V threshold (VGS(TH)) at ID=250 µA.
2 D passive Drain, which is also the exposed tab, rated for 100 V drain-to-source and 120 A continuous at TC=25℃ (480 A pulsed).
3 S passive Source, the current return terminal of the N-channel MOSFET, with a continuous source current (IS) of 120 A through the integral body diode.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 100 V 1
Continuous Drain Current ID 120 A TC=25℃ 1
Continuous Drain Current ID 80 A TC=100℃ 1
Pulsed Drain Current IDM 480 A 1
Power Dissipation PD 178 W 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 486 mJ L = 3.0mH, VDS = 50V, RG = 25Ω, Tj = 25℃ 1
Maximum Temperature for Soldering, leads at 0.063in (1.6mm) from case for 10 seconds TL 300 ℃ Leads at 0.063in (1.6mm) from case for 10 seconds 1
Maximum Temperature for Soldering, package body for 10 seconds TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 0.7 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 46 ℃/W 1 cubic foot chamber, free air 2
Drain-to-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=80V, VGS=0V 2
Gate-to-Source Forward Leakage Current IGSS 100 nA VGS=20V, VDS=0V 2
Gate-to-Source Reverse Leakage Current IGSS -100 nA VGS=-20V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 4.3 5.3 mΩ VGS=10V, ID=20A 2
Static Drain-to-Source On-Resistance RDS(on) 5.5 7.5 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(TH) 2 3 4 V VGS=VDS, ID=250µA 2
Continuous Source Current (integral pn-diode in MOSFET) IS 120 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 480 A 3
Diode Forward Voltage VSD 1 V IS=20A, VGS=0V 3

CAD (KiCad official)

  • Symbol: RS100N120S
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: rs100n120s-etched.step / rs100n120s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs100n120s.step / rs100n120s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (9 pp, sha256 29d578f76143d51b, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF