# RQ6E030ATTCR

**ROHM Semicon** · MOSFETs · SOT-23-6

RQ6E030ATTCR from ROHM Semicon, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain of the Pch MOSFET, internally connected to the other drain pins (2, 5, 6); VDSS is -30V and continuous ID is ±3.0A. |
| 2 | Drain | passive | Drain of the Pch MOSFET, internally connected to the other drain pins (1, 5, 6); VDSS is -30V and continuous ID is ±3.0A. |
| 3 | Gate | input | Gate of the Pch MOSFET with a VGSS rating of ±20V and a threshold VGS(th) of -1.0 to -2.5V at ID = -1mA. |
| 4 | Source | passive | Source of the Pch MOSFET, with body diode continuous forward current of -1.0A. |
| 5 | Drain | passive | Drain of the Pch MOSFET, internally connected to the other drain pins (1, 2, 6); pulsed drain current is ±12A. |
| 6 | Drain | passive | Drain of the Pch MOSFET, internally connected to the other drain pins (1, 2, 5); RDS(on) is max 91mΩ at VGS = -10V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | -30 |  |  | V |  | 1 |
| Continuous drain current | ID | -3 |  | 3 | A |  | 1 |
| Pulsed drain current | IDP | -12 |  | 12 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 1 |
| Gate - Source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Avalanche current, single pulse | IAS | -3 |  |  | A | L ⋍ 0.5mH, VDD = -15V, RG = 25Ω, Starting Tj = 25℃ | 1 |
| Avalanche energy, single pulse | EAS |  |  | 3.3 | mJ | L ⋍ 0.5mH, VDD = -15V, RG = 25Ω, Starting Tj = 25℃ | 1 |
| Power dissipation (ceramic board, 30×30×0.8mm) | PD |  |  | 1.25 | W | Mounted on a ceramic board (30×30×0.8mm) | 1 |
| Power dissipation (FR4, 25×25×0.8mm) | PD |  |  | 0.95 | W | Mounted on a FR4 (25×25×0.8mm) | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction - ambient | RthJA |  |  | 100 | ℃/W | Mounted on a ceramic board (30×30×0.8mm) | 2 |
| Thermal resistance, junction - ambient | RthJA |  |  | 132 | ℃/W | Mounted on a FR4 (25×25×0.8mm) | 2 |
| Drain - Source breakdown voltage | V(BR)DSS | -30 |  |  | V | VGS = 0V, ID = -1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | -1 | μA | VDS = -30V, VGS = 0V | 2 |
| Gate - Source leakage current | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | -1 |  | -2.5 | V | VDS = VGS, ID = -1mA | 2 |
| Static drain - source on - state resistance (VGS = -10V) | RDS(on) |  | 70 | 91 | mΩ | VGS = -10V, ID = -3.0A, Pulsed | 2 |
| Static drain - source on - state resistance (VGS = -4.5V) | RDS(on) |  | 104 | 135 | mΩ | VGS = -4.5V, ID = -3.0A, Pulsed | 2 |
| Forward Transfer Admittance | /Yfs/ | 2.4 |  |  | S | VDS = -5V, ID = -3.0A, Pulsed | 2 |
| Continuous forward current | IS |  |  | -1 | A | Ta = 25℃ | 3 |
| Pulse forward current | ISP |  |  | -12 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 3 |
| Forward voltage | VSD |  |  | -1.2 | V | VGS = 0V, IS = -1.0A | 3 |
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj |  | -22 |  | mV/℃ | ID = -1mA, referenced to 25℃ | 2 |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj |  | 2.9 |  | mV/℃ | ID = -1mA, referenced to 25℃ | 2 |
| Gate resistance | RG |  | 14 |  | Ω | f = 1MHz, open drain | 2 |
| Input capacitance | Ciss |  | 240 |  | pF | VGS = 0V | 3 |
| Output capacitance | Coss |  | 45 |  | pF | VDS = -15V | 3 |
| Reverse transfer capacitance | Crss |  | 35 |  | pF | f = 1MHz | 3 |
| Turn - on delay time | td(on) |  | 6.5 |  | ns | VDD ⋍ -15V, VGS = -10V | 3 |
| Rise time | tr |  | 8.5 |  | ns | ID = -1.5A | 3 |
| Turn - off delay time | td(off) |  | 22 |  | ns | RL ⋍ 10Ω | 3 |
| Fall time | tf |  | 5.5 |  | ns | RG = 10Ω | 3 |
| Total gate charge (VGS = -10V) | Qg |  | 5.4 |  | nC | VDD ⋍ -15V, ID = -3.0A, VGS = -10V | 3 |
| Total gate charge (VGS = -4.5V) | Qg |  | 2.7 |  | nC | VGS = -4.5V | 3 |
| Gate - Source charge | Qgs |  | 0.8 |  | nC |  | 3 |
| Gate - Drain charge | Qgd |  | 1 |  | nC |  | 3 |

## CAD (KiCad official)

- Symbol: `RQ6E030ATTCR`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `rq6e030attcr-etched.step` / `rq6e030attcr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rq6e030attcr.step` / `rq6e030attcr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589948619919945728) (14 pp, sha256 `0278a4e871335fe7`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rq6e030attcr-datasheet.pdf)