component
RQ6E030ATTCR
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| rq6e030attcr-etched.glb | 13d ago |
| rq6e030attcr-etched.step | 13d ago |
| rq6e030attcr-hero.glb | 13d ago |
| rq6e030attcr-hero.overlay.json | 13d ago |
| rq6e030attcr.glb | 13d ago |
| rq6e030attcr.kicad_mod | 13d ago |
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| rq6e030attcr.lbr | 13d ago |
| rq6e030attcr.step | 13d ago |
RQ6E030ATTCR
ROHM Semicon · MOSFETs · SOT-23-6
RQ6E030ATTCR from ROHM Semicon, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain of the Pch MOSFET, internally connected to the other drain pins (2, 5, 6); VDSS is -30V and continuous ID is ±3.0A. |
| 2 | Drain | passive | Drain of the Pch MOSFET, internally connected to the other drain pins (1, 5, 6); VDSS is -30V and continuous ID is ±3.0A. |
| 3 | Gate | input | Gate of the Pch MOSFET with a VGSS rating of ±20V and a threshold VGS(th) of -1.0 to -2.5V at ID = -1mA. |
| 4 | Source | passive | Source of the Pch MOSFET, with body diode continuous forward current of -1.0A. |
| 5 | Drain | passive | Drain of the Pch MOSFET, internally connected to the other drain pins (1, 2, 6); pulsed drain current is ±12A. |
| 6 | Drain | passive | Drain of the Pch MOSFET, internally connected to the other drain pins (1, 2, 5); RDS(on) is max 91mΩ at VGS = -10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | -30 | V | 1 | |||
| Continuous drain current | ID | -3 | 3 | A | 1 | ||
| Pulsed drain current | IDP | -12 | 12 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche current, single pulse | IAS | -3 | A | L ⋍ 0.5mH, VDD = -15V, RG = 25Ω, Starting Tj = 25℃ | 1 | ||
| Avalanche energy, single pulse | EAS | 3.3 | mJ | L ⋍ 0.5mH, VDD = -15V, RG = 25Ω, Starting Tj = 25℃ | 1 | ||
| Power dissipation (ceramic board, 30×30×0.8mm) | PD | 1.25 | W | Mounted on a ceramic board (30×30×0.8mm) | 1 | ||
| Power dissipation (FR4, 25×25×0.8mm) | PD | 0.95 | W | Mounted on a FR4 (25×25×0.8mm) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient | RthJA | 100 | ℃/W | Mounted on a ceramic board (30×30×0.8mm) | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 132 | ℃/W | Mounted on a FR4 (25×25×0.8mm) | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -1mA | 2 | |
| Static drain - source on - state resistance (VGS = -10V) | RDS(on) | 70 | 91 | mΩ | VGS = -10V, ID = -3.0A, Pulsed | 2 | |
| Static drain - source on - state resistance (VGS = -4.5V) | RDS(on) | 104 | 135 | mΩ | VGS = -4.5V, ID = -3.0A, Pulsed | 2 | |
| Forward Transfer Admittance | /Yfs/ | 2.4 | S | VDS = -5V, ID = -3.0A, Pulsed | 2 | ||
| Continuous forward current | IS | -1 | A | Ta = 25℃ | 3 | ||
| Pulse forward current | ISP | -12 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 3 | ||
| Forward voltage | VSD | -1.2 | V | VGS = 0V, IS = -1.0A | 3 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | -22 | mV/℃ | ID = -1mA, referenced to 25℃ | 2 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | 2.9 | mV/℃ | ID = -1mA, referenced to 25℃ | 2 | ||
| Gate resistance | RG | 14 | Ω | f = 1MHz, open drain | 2 | ||
| Input capacitance | Ciss | 240 | pF | VGS = 0V | 3 | ||
| Output capacitance | Coss | 45 | pF | VDS = -15V | 3 | ||
| Reverse transfer capacitance | Crss | 35 | pF | f = 1MHz | 3 | ||
| Turn - on delay time | td(on) | 6.5 | ns | VDD ⋍ -15V, VGS = -10V | 3 | ||
| Rise time | tr | 8.5 | ns | ID = -1.5A | 3 | ||
| Turn - off delay time | td(off) | 22 | ns | RL ⋍ 10Ω | 3 | ||
| Fall time | tf | 5.5 | ns | RG = 10Ω | 3 | ||
| Total gate charge (VGS = -10V) | Qg | 5.4 | nC | VDD ⋍ -15V, ID = -3.0A, VGS = -10V | 3 | ||
| Total gate charge (VGS = -4.5V) | Qg | 2.7 | nC | VGS = -4.5V | 3 | ||
| Gate - Source charge | Qgs | 0.8 | nC | 3 | |||
| Gate - Drain charge | Qgd | 1 | nC | 3 |
CAD (KiCad official)
- Symbol:
RQ6E030ATTCR - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
rq6e030attcr-etched.step/rq6e030attcr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rq6e030attcr.step/rq6e030attcr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
0278a4e871335fe7, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).