component
RJU003N03T106
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RJU003N03T106
ROHM Semicon · MOSFETs · SOT-323
RJU003N03T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal, ultra low voltage drive (2.5V drive), VGSS max ±12 V, with an ESD protection diode to source. |
| 2 | Source | passive | Source terminal of the Nch MOSFET, continuous drain current ±300 mA, with body diode to drain (VSD max 1.2 V at IS = 200 mA). |
| 3 | Drain | passive | Drain terminal, VDSS 30 V, continuous drain current ±300 mA, pulsed ±1.2 A, RDS(on) max 1.1 Ω at VGS = 4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 30 | V | 1 | |||
| Continuous drain current | ID | -300 | 300 | mA | 1 | ||
| Pulsed drain current | IDP | -1.2 | 1.2 | A | Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate - Source voltage | VGSS | -12 | 12 | V | 1 | ||
| Power dissipation | PD | 200 | mW | Each terminal mounted on a reference land. | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient | RthJA | 625 | ℃/W | Each terminal mounted on a reference land. | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 30 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 30V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±12V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.8 | 1.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on - state resistance (VGS = 4.5V) | RDS(on) | 0.8 | 1.1 | Ω | VGS = 4.5V, ID = 300mA, Pulsed | 2 | |
| Static drain - source on - state resistance (VGS = 4V) | RDS(on) | 0.9 | 1.3 | Ω | VGS = 4V, ID = 300mA, Pulsed | 2 | |
| Static drain - source on - state resistance (VGS = 2.5V) | RDS(on) | 1.4 | 1.9 | Ω | VGS = 2.5V, ID = 300mA, Pulsed | 2 | |
| Forward transfer admittance | /Yfs/ | 400 | mS | VDS = 10V, ID = 300mA, Pulsed | 2 | ||
| Forward voltage (body diode) | VSD | 1.2 | V | VGS = 0V, IS = 200mA, Pulsed | 3 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS | 35 | mV/℃ | ID = 1mA, ΔTj referenced to 25℃ | 2 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th) | -2.04 | mV/℃ | ID = 1mA, ΔTj referenced to 25℃ | 2 | ||
| Input capacitance | Ciss | 24 | pF | VGS = 0V | 3 | ||
| Output capacitance | Coss | 11 | pF | VDS = 10V | 3 | ||
| Reverse transfer capacitance | Crss | 5 | pF | f = 1MHz | 3 | ||
| Turn - on delay time | td(on) | 6 | ns | VDD ⋍ 15V, VGS = 4V | 3 | ||
| Rise time | tr | 4 | ns | ID = 150mA | 3 | ||
| Turn - off delay time | td(off) | 9 | ns | RL ⋍ 100Ω | 3 | ||
| Fall time | tf | 32 | ns | RG = 10Ω | 3 |
CAD (KiCad official)
- Symbol:
RJU003N03T106 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
rju003n03t106-etched.step/rju003n03t106-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rju003n03t106.step/rju003n03t106.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
bf9b338a504d8bc8, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RJU003N03T106
**ROHM Semicon** · MOSFETs · SOT-323
RJU003N03T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal, ultra low voltage drive (2.5V drive), VGSS max ±12 V, with an ESD protection diode to source. |
| 2 | Source | passive | Source terminal of the Nch MOSFET, continuous drain current ±300 mA, with body diode to drain (VSD max 1.2 V at IS = 200 mA). |
| 3 | Drain | passive | Drain terminal, VDSS 30 V, continuous drain current ±300 mA, pulsed ±1.2 A, RDS(on) max 1.1 Ω at VGS = 4.5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | | | 30 | V | | 1 |
| Continuous drain current | ID | -300 | | 300 | mA | | 1 |
| Pulsed drain current | IDP | -1.2 | | 1.2 | A | Pw≦10μs, Duty cycle≦1% | 1 |
| Gate - Source voltage | VGSS | -12 | | 12 | V | | 1 |
| Power dissipation | PD | | | 200 | mW | Each terminal mounted on a reference land. | 1 |
| Junction temperature | Tj | | | 150 | ℃ | | 1 |
| Operating junction and storage temperature range | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction - ambient | RthJA | | | 625 | ℃/W | Each terminal mounted on a reference land. | 2 |
| Drain - Source breakdown voltage | V(BR)DSS | 30 | | | V | VGS = 0V, ID = 1mA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS = 30V, VGS = 0V | 2 |
| Gate - Source leakage current | IGSS | -10 | | 10 | μA | VGS = ±12V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 0.8 | | 1.5 | V | VDS = 10V, ID = 1mA | 2 |
| Static drain - source on - state resistance (VGS = 4.5V) | RDS(on) | | 0.8 | 1.1 | Ω | VGS = 4.5V, ID = 300mA, Pulsed | 2 |
| Static drain - source on - state resistance (VGS = 4V) | RDS(on) | | 0.9 | 1.3 | Ω | VGS = 4V, ID = 300mA, Pulsed | 2 |
| Static drain - source on - state resistance (VGS = 2.5V) | RDS(on) | | 1.4 | 1.9 | Ω | VGS = 2.5V, ID = 300mA, Pulsed | 2 |
| Forward transfer admittance | /Yfs/ | 400 | | | mS | VDS = 10V, ID = 300mA, Pulsed | 2 |
| Forward voltage (body diode) | VSD | | | 1.2 | V | VGS = 0V, IS = 200mA, Pulsed | 3 |
| Breakdown voltage temperature coefficient | ΔV(BR)DSS | | 35 | | mV/℃ | ID = 1mA, ΔTj referenced to 25℃ | 2 |
| Gate threshold voltage temperature coefficient | ΔVGS(th) | | -2.04 | | mV/℃ | ID = 1mA, ΔTj referenced to 25℃ | 2 |
| Input capacitance | Ciss | | 24 | | pF | VGS = 0V | 3 |
| Output capacitance | Coss | | 11 | | pF | VDS = 10V | 3 |
| Reverse transfer capacitance | Crss | | 5 | | pF | f = 1MHz | 3 |
| Turn - on delay time | td(on) | | 6 | | ns | VDD ⋍ 15V, VGS = 4V | 3 |
| Rise time | tr | | 4 | | ns | ID = 150mA | 3 |
| Turn - off delay time | td(off) | | 9 | | ns | RL ⋍ 100Ω | 3 |
| Fall time | tf | | 32 | | ns | RG = 10Ω | 3 |
## CAD (KiCad official)
- Symbol: `RJU003N03T106`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `rju003n03t106-etched.step` / `rju003n03t106-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rju003n03t106.step` / `rju003n03t106.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586205827341930496) (13 pp, sha256 `bf9b338a504d8bc8`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rju003n03t106-datasheet.pdf)