component

RJU003N03T106

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsrju003n03t106factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers rju003n03t106: viewers · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago
rju003n03t106-etched.glb Publish 0.1.0 · Ray 16d ago
rju003n03t106-etched.step rju003n03t106: factory component page (tier=lcsc) · Ray 16d ago
rju003n03t106-hero.glb rju003n03t106: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
rju003n03t106-hero.overlay.json Publish 0.1.0 · Ray 16d ago
rju003n03t106.glb Publish 0.1.0 · Ray 16d ago
rju003n03t106.kicad_mod Publish 0.1.0 · Ray 16d ago
rju003n03t106.kicad_sym Publish 0.1.0 · Ray 16d ago
rju003n03t106.lbr Publish 0.1.0 · Ray 16d ago
rju003n03t106.step Publish 0.1.0 · Ray 16d ago

RJU003N03T106

ROHM Semicon · MOSFETs · SOT-323

RJU003N03T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal, ultra low voltage drive (2.5V drive), VGSS max ±12 V, with an ESD protection diode to source.
2 Source passive Source terminal of the Nch MOSFET, continuous drain current ±300 mA, with body diode to drain (VSD max 1.2 V at IS = 200 mA).
3 Drain passive Drain terminal, VDSS 30 V, continuous drain current ±300 mA, pulsed ±1.2 A, RDS(on) max 1.1 Ω at VGS = 4.5 V.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS 30 V 1
Continuous drain current ID -300 300 mA 1
Pulsed drain current IDP -1.2 1.2 A Pw≦10μs, Duty cycle≦1% 1
Gate - Source voltage VGSS -12 12 V 1
Power dissipation PD 200 mW Each terminal mounted on a reference land. 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient RthJA 625 ℃/W Each terminal mounted on a reference land. 2
Drain - Source breakdown voltage V(BR)DSS 30 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±12V, VDS = 0V 2
Gate threshold voltage VGS(th) 0.8 1.5 V VDS = 10V, ID = 1mA 2
Static drain - source on - state resistance (VGS = 4.5V) RDS(on) 0.8 1.1 Ω VGS = 4.5V, ID = 300mA, Pulsed 2
Static drain - source on - state resistance (VGS = 4V) RDS(on) 0.9 1.3 Ω VGS = 4V, ID = 300mA, Pulsed 2
Static drain - source on - state resistance (VGS = 2.5V) RDS(on) 1.4 1.9 Ω VGS = 2.5V, ID = 300mA, Pulsed 2
Forward transfer admittance /Yfs/ 400 mS VDS = 10V, ID = 300mA, Pulsed 2
Forward voltage (body diode) VSD 1.2 V VGS = 0V, IS = 200mA, Pulsed 3
Breakdown voltage temperature coefficient ΔV(BR)DSS 35 mV/℃ ID = 1mA, ΔTj referenced to 25℃ 2
Gate threshold voltage temperature coefficient ΔVGS(th) -2.04 mV/℃ ID = 1mA, ΔTj referenced to 25℃ 2
Input capacitance Ciss 24 pF VGS = 0V 3
Output capacitance Coss 11 pF VDS = 10V 3
Reverse transfer capacitance Crss 5 pF f = 1MHz 3
Turn - on delay time td(on) 6 ns VDD ⋍ 15V, VGS = 4V 3
Rise time tr 4 ns ID = 150mA 3
Turn - off delay time td(off) 9 ns RL ⋍ 100Ω 3
Fall time tf 32 ns RG = 10Ω 3

CAD (KiCad official)

  • Symbol: RJU003N03T106
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: rju003n03t106-etched.step / rju003n03t106-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rju003n03t106.step / rju003n03t106.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (13 pp, sha256 bf9b338a504d8bc8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF