# RHU002N06T106

**ROHM Semicon** · MOSFETs · SOT-323

RHU002N06T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET; the body diode is between source and drain, rated at IS 200 mA continuous and ISP 800 mA pulsed (Pw≤10μs, duty≤1%). |
| 2 | Gate | input | Gate terminal with a built-in ESD protection diode between gate and source; gate-source voltage is limited to ±20 V (VGSS), and the datasheet advises using an external protection circuit when fixed voltages are exceeded. |
| 3 | Drain | passive | Drain terminal; drain-source voltage is limited to 60 V (VDSS), with drain current rated at ±200 mA continuous and ±800 mA pulsed (Pw≤10μs, duty≤1%). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | ID=1mA, VGS=0V | 2 |
| Gate threshold voltage | VGS(th) | 1 |  | 2.5 | V | VDS=10V, ID=1mA | 2 |
| Gate leakage current | IGSS | -10 |  | 10 | μA | VGS=±20V, VDS=0V | 2 |
| Drain cutoff current | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V | 2 |
| Forward transfer admittance | /Yfs/ | 0.1 |  |  | S | VDS=10V, ID=200mA | 2 |
| Drain-source on-state resistance | RDS(on) |  | 2.2 | 4.4 | Ω | ID=200mA, VGS=10V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 2.8 | 4 | Ω | ID=200mA, VGS=4V | 2 |
| Forward voltage (body diode) | VSD |  |  | 1.2 | V | IS=200mA, VGS=0V | 2 |
| Drain-source voltage | VDSS |  |  | 60 | V |  | 1 |
| Gate-source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Drain current, continuous | ID | -200 |  | 200 | mA |  | 1 |
| Drain current, pulsed | IDP | -800 |  | 800 | mA | Pw≤10μs, Duty cycle≤1% | 1 |
| Source current (body diode), continuous | IS |  |  | 200 | mA |  | 1 |
| Source current (body diode), pulsed | ISP |  |  | 800 | mA | Pw≤10μs, Duty cycle≤1% | 1 |
| Total power dissipation | PD |  |  | 200 | mW | Each terminal mounted on a recommended land | 1 |
| Channel temperature | Tch |  |  | 150 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, channel to ambient | Rth(ch-a) |  | 625 |  | °C/W | Each pin mounted on the recommended land | 1 |

## CAD (KiCad official)

- Symbol: `RHU002N06T106`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `rhu002n06t106-etched.step` / `rhu002n06t106-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rhu002n06t106.step` / `rhu002n06t106.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918459933593600) (4 pp, sha256 `56a77de0eebd6985`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rhu002n06t106-datasheet.pdf)