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RHU002N06T106

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RHU002N06T106

ROHM Semicon · MOSFETs · SOT-323

RHU002N06T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel MOSFET; the body diode is between source and drain, rated at IS 200 mA continuous and ISP 800 mA pulsed (Pw≤10μs, duty≤1%).
2 Gate input Gate terminal with a built-in ESD protection diode between gate and source; gate-source voltage is limited to ±20 V (VGSS), and the datasheet advises using an external protection circuit when fixed voltages are exceeded.
3 Drain passive Drain terminal; drain-source voltage is limited to 60 V (VDSS), with drain current rated at ±200 mA continuous and ±800 mA pulsed (Pw≤10μs, duty≤1%).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 60 V ID=1mA, VGS=0V 2
Gate threshold voltage VGS(th) 1 2.5 V VDS=10V, ID=1mA 2
Gate leakage current IGSS -10 10 μA VGS=±20V, VDS=0V 2
Drain cutoff current IDSS 1 μA VDS=60V, VGS=0V 2
Forward transfer admittance /Yfs/ 0.1 S VDS=10V, ID=200mA 2
Drain-source on-state resistance RDS(on) 2.2 4.4 Ω ID=200mA, VGS=10V 2
Drain-source on-state resistance RDS(on) 2.8 4 Ω ID=200mA, VGS=4V 2
Forward voltage (body diode) VSD 1.2 V IS=200mA, VGS=0V 2
Drain-source voltage VDSS 60 V 1
Gate-source voltage VGSS -20 20 V 1
Drain current, continuous ID -200 200 mA 1
Drain current, pulsed IDP -800 800 mA Pw≤10μs, Duty cycle≤1% 1
Source current (body diode), continuous IS 200 mA 1
Source current (body diode), pulsed ISP 800 mA Pw≤10μs, Duty cycle≤1% 1
Total power dissipation PD 200 mW Each terminal mounted on a recommended land 1
Channel temperature Tch 150 °C 1
Storage temperature Tstg -55 150 °C 1
Thermal resistance, channel to ambient Rth(ch-a) 625 °C/W Each pin mounted on the recommended land 1

CAD (KiCad official)

  • Symbol: RHU002N06T106
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: rhu002n06t106-etched.step / rhu002n06t106-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rhu002n06t106.step / rhu002n06t106.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (4 pp, sha256 56a77de0eebd6985, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF