RGT80TS65DGC13

{
  "slug": "rgt80ts65dgc13",
  "version": "0.1.0",
  "type": "component",
  "description": "ROHM Semicon IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
    "component",
    "triode-mos tube-transistor",
    "rgt80ts65dgc13",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "rgt80ts65dgc13.kicad_sym",
    "rgt80ts65dgc13.kicad_mod",
    "rgt80ts65dgc13.glb",
    "rgt80ts65dgc13.step",
    "rgt80ts65dgc13.lbr",
    "docs/hero.png",
    "docs/rgt80ts65dgc13-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "rgt80ts65dgc13-hero.glb",
    "rgt80ts65dgc13-hero.overlay.json",
    "rgt80ts65dgc13-etched.glb"
  ],
  "component": {
    "mpn": "RGT80TS65DGC13",
    "manufacturer": "ROHM Semicon",
    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "IGBTs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/6dffae8ca0335fbcb3cffb1936a39a85.pdf",
    "parts": {
      "symbol": "rgt80ts65dgc13.kicad_sym",
      "footprint": "rgt80ts65dgc13.kicad_mod",
      "model_3d": "rgt80ts65dgc13-hero.glb",
      "model_3d_plain": "rgt80ts65dgc13-etched.glb",
      "model_3d_step": "rgt80ts65dgc13-etched.step",
      "model_3d_step_plain": "rgt80ts65dgc13.step",
      "lbr": "rgt80ts65dgc13.lbr"
    },
    "distributor_links": {
      "lcsc": "C2981748",
      "digikey": "846-RGT80TS65DGC13-ND",
      "mouser": "755-RGT80TS65DGC13"
    },
    "distributor_check": {
      "checked_at": "2026-11-02T19:26:43Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "846-RGT80TS65DGC13-ND",
        "status": "found",
        "lifecycle": "Not For New Designs"
      },
      "mouser": {
        "pn": "755-RGT80TS65DGC13",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate terminal of the IGBT, with gate-emitter voltage limited to VGES ±30 V and threshold VGE(th) of 5.0 to 7.0 V."
      },
      {
        "number": "2",
        "name": "Collector",
        "type": "passive",
        "description": "Collector terminal, rated VCES 650 V and IC 40 A at TC = 100°C, with built-in FRD connected between emitter and collector."
      },
      {
        "number": "3",
        "name": "Emitter",
        "type": "passive",
        "description": "Emitter terminal of the IGBT, which is the anode side of the built-in fast recovery diode (diode forward current IF 40 A at TC = 25°C)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet text gives pin assignments only through the inner circuit labels (1) Gate, (2) Collect"
        ],
        "pages_sent": 13,
        "cost_usd": 0.1145,
        "at": "2026-11-02T19:26:24"
      },
      "datasheet": {
        "url": "https://datasheet.lcsc.com/datasheet/pdf/6dffae8ca0335fbcb3cffb1936a39a85.pdf",
        "pages": 13,
        "sha256": "f5e48b6eda4f0e36",
        "source_tier": "mfr"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
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        "file": "rgt80ts65dgc13.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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          5.03,
          41.1
        ],
        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
        "checked": "2026-11-02",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "rgt80ts65dgc13-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "footprint_binding": "identity",
        "sha256": "0ee4a40f9cacdc33bdffa735288c2e9ae91a74aca7760f61df303f26e66ddbde",
        "checked": "2026-11-02",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  }
}