component
RGT80TS65DGC13
Public Made by Adomby adom
ROHM Semicon IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRGT80TS65DGC13
ROHM Semicon · IGBTs · TO-247-3
RGT80TS65DGC13 from ROHM Semicon, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the IGBT, with gate-emitter voltage limited to VGES ±30 V and threshold VGE(th) of 5.0 to 7.0 V. |
| 2 | Collector | passive | Collector terminal, rated VCES 650 V and IC 40 A at TC = 100°C, with built-in FRD connected between emitter and collector. |
| 3 | Emitter | passive | Emitter terminal of the IGBT, which is the anode side of the built-in fast recovery diode (diode forward current IF 40 A at TC = 25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-247-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | 650 | V | Tc=25°C | 1 | ||
| Gate-Emitter Voltage | VGES | 30 | V | 1 | |||
| Collector Current | IC | 70 | A | TC = 25°C | 1 | ||
| Collector Current | IC | 40 | A | TC = 100°C | 1 | ||
| Pulsed Collector Current | ICP | 120 | A | Pulse width limited by Tjmax | 1 | ||
| Diode Forward Current | IF | 40 | A | TC = 25°C | 1 | ||
| Diode Forward Current | IF | 20 | A | TC = 100°C | 1 | ||
| Diode Pulsed Forward Current | IFP | 120 | A | Pulse width limited by Tjmax | 1 | ||
| Power Dissipation | PD | 234 | W | TC = 25°C | 1 | ||
| Power Dissipation | PD | 117 | W | TC = 100°C | 1 | ||
| Operating Junction Temperature | Tj | -40 | 175 | °C | 1 | ||
| Storage Temperature | Tstg | -55 | 175 | °C | 1 | ||
| Thermal Resistance IGBT Junction-Case | Rθ(j-c) | 0.64 | °C/W | 2 | |||
| Thermal Resistance Diode Junction-Case | Rθ(j-c) | 2 | °C/W | 2 | |||
| Collector-Emitter Breakdown Voltage | BVCES | 650 | V | IC = 10μA, VGE = 0V | 2 | ||
| Collector Cut-off Current | ICES | 10 | μA | VCE = 650V, VGE = 0V | 2 | ||
| Gate-Emitter Leakage Current | IGES | 200 | nA | VGE = 30V, VCE = 0V | 2 | ||
| Gate-Emitter Threshold Voltage | VGE(th) | 5 | 6 | 7 | V | VCE = 5V, IC = 27.6mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.65 | 2.1 | V | IC = 40A, VGE = 15V, Tj = 25°C | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.15 | V | IC = 40A, VGE = 15V, Tj = 175°C | 2 | ||
| Short Circuit Withstand Time | tsc | 5 | μs | VCC ≦ 360V, VGE = 15V, Tj = 25°C | 3 | ||
| Diode Forward Voltage | VF | 1.35 | 1.8 | V | IF = 20A, Tj = 25°C | 4 | |
| Diode Forward Voltage | VF | 1.15 | V | IF = 20A, Tj = 175°C | 4 | ||
| Input Capacitance | Cies | 2210 | pF | VCE = 30V, VGE = 0V, f = 1MHz | 3 | ||
| Output Capacitance | Coes | 87 | pF | VCE = 30V, VGE = 0V, f = 1MHz | 3 | ||
| Reverse Transfer Capacitance | Cres | 36 | pF | VCE = 30V, VGE = 0V, f = 1MHz | 3 | ||
| Total Gate Charge | Qg | 79 | nC | VCE = 300V, IC = 40A, VGE = 15V | 3 | ||
| Gate-Emitter Charge | Qge | 21 | nC | IC = 40A, VGE = 15V | 3 | ||
| Gate-Collector Charge | Qgc | 29 | nC | IC = 40A, VGE = 15V | 3 | ||
| Turn-on Delay Time | td(on) | 34 | ns | Tj = 25°C, IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, inductive load | 3 | ||
| Rise Time | tr | 56 | ns | Tj = 25°C, IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, inductive load | 3 | ||
| Turn-off Delay Time | td(off) | 119 | ns | Tj = 25°C, IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, inductive load | 3 | ||
| Fall Time | tf | 55 | ns | Tj = 25°C, IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, inductive load | 3 | ||
| Turn-off Delay Time | td(off) | 131 | ns | Tj = 175°C, IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, inductive load | 3 | ||
| Fall Time | tf | 75 | ns | Tj = 175°C, IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, inductive load | 3 | ||
| Diode Reverse Recovery Time | trr | 58 | ns | IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C | 4 | ||
| Diode Peak Reverse Recovery Current | Irr | 6.5 | A | IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C | 4 | ||
| Diode Reverse Recovery Charge | Qrr | 0.21 | μC | IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C | 4 | ||
| Diode Reverse Recovery Time | trr | 236 | ns | IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C | 4 | ||
| Diode Peak Reverse Recovery Current | Irr | 10.7 | A | IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C | 4 | ||
| Diode Reverse Recovery Charge | Qrr | 1.36 | μC | IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C | 4 |
CAD (KiCad official)
- Symbol:
RGT80TS65DGC13 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
rgt80ts65dgc13-etched.step/rgt80ts65dgc13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rgt80ts65dgc13.step/rgt80ts65dgc13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
f5e48b6eda4f0e36, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).