component
RFP50N06
Public Made by Adomby adom
onsemi MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 15d ago |
| viewers | 15d ago |
| package.json | 15d ago |
| page.json | 15d ago |
| README.md | 15d ago |
| rfp50n06-etched.glb | 15d ago |
| rfp50n06-etched.step | 15d ago |
| rfp50n06-hero.glb | 15d ago |
| rfp50n06-hero.overlay.json | 15d ago |
| rfp50n06.glb | 15d ago |
| rfp50n06.kicad_mod | 15d ago |
| rfp50n06.kicad_sym | 15d ago |
| rfp50n06.lbr | 15d ago |
| rfp50n06.step | 15d ago |
RFP50N06
onsemi · MOSFETs · TO-220AB
RFP50N06 from onsemi, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-to-source voltage is rated at ±20 V and the threshold VGS(TH) is 2 V to 4 V at ID = 250 µA. |
| 2 | D | passive | Drain, connected to the flange; the drain-to-source voltage is rated at 60 V and the continuous drain current at 50 A. |
| 3 | S | passive | Source; this is the reference terminal for the gate drive and the anode of the body diode (VSD max 1.5 V at ISD = 50 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 60 | V | ID = 250µA, VGS = 0V (Figure 11) | 3 | ||
| Gate to Source Threshold Voltage | VGS(TH) | 2 | 4 | V | VGS = VDS, ID = 250µA (Figure 10) | 3 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60V, VGS = 0V, TC = 25oC | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 60V, VGS = 0V, TC = 150oC | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V | 3 | |
| Drain to Source On Resistance | rDS(ON) | 0.022 | Ω | ID = 50A, VGS = 10V (Figures 9) | 3 | ||
| Turn-On Time | tON | 95 | ns | VDD = 30V, ID = 50A, RL = 0.6Ω, VGS = 10V, RGS = 3.6Ω (Figure 13) | 3 | ||
| Turn-Off Time | tOFF | 75 | ns | VDD = 30V, ID = 50A, RL = 0.6Ω, VGS = 10V, RGS = 3.6Ω (Figure 13) | 3 | ||
| Total Gate Charge | Qg(TOT) | 125 | 150 | nC | VGS = 0 to 20V, VDD = 48V, ID = 50A, RL = 0.96Ω, Ig(REF) = 1.45mA (Figure 13) | 3 | |
| Gate Charge at 10V | Qg(10) | 67 | 80 | nC | VGS = 0 to 10V | 3 | |
| Threshold Gate Charge | Qg(TH) | 3.7 | 4.5 | nC | VGS = 0 to 2V | 3 | |
| Thermal Resistance Junction to Case | RθJC | 1.14 | oC/W | (Figure 3) | 3 | ||
| Thermal Resistance Junction to Ambient | RθJA | 62 | oC/W | TO-220 | 3 | ||
| Source to Drain Diode Voltage | VSD | 1.5 | V | ISD = 50A | 3 | ||
| Reverse Recovery Time | trr | 125 | ns | ISD = 50A, dISD/dt = 100A/µs | 3 | ||
| Drain to Source Voltage | VDSS | 60 | V | TJ = 25oC to 150oC (Note 1) | 3 | ||
| Drain to Gate Voltage | VDGR | 60 | V | RGS = 20kΩ, TJ = 25oC to 150oC (Note 1) | 3 | ||
| Gate to Source Voltage | VGS | -20 | 20 | V | TC = 25oC | 3 | |
| Continuous Drain Current | ID | 50 | A | TC = 25oC (Figure 2) | 3 | ||
| Power Dissipation | PD | 131 | W | TC = 25oC | 3 | ||
| Linear Derating Factor | 0.877 | W/oC | TC = 25oC | 3 | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | oC | 3 | ||
| Maximum Temperature for Soldering, Leads | TL | 300 | oC | Leads at 0.063in (1.6mm) from Case for 10s | 3 | ||
| Maximum Temperature for Soldering, Package Body | Tpkg | 260 | oC | Package Body for 10s, see Techbrief 334 | 3 | ||
| Turn-On Delay Time | td(ON) | 12 | ns | VDD = 30V, ID = 50A, RL = 0.6Ω, VGS = 10V, RGS = 3.6Ω (Figure 13) | 3 | ||
| Rise Time | tr | 55 | ns | VDD = 30V, ID = 50A, RL = 0.6Ω, VGS = 10V, RGS = 3.6Ω (Figure 13) | 3 | ||
| Turn-Off Delay Time | td(OFF) | 37 | ns | VDD = 30V, ID = 50A, RL = 0.6Ω, VGS = 10V, RGS = 3.6Ω (Figure 13) | 3 | ||
| Fall Time | tf | 13 | ns | VDD = 30V, ID = 50A, RL = 0.6Ω, VGS = 10V, RGS = 3.6Ω (Figure 13) | 3 | ||
| Input Capacitance | CISS | 2020 | pF | VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) | 3 | ||
| Output Capacitance | COSS | 600 | pF | VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) | 3 | ||
| Reverse Transfer Capacitance | CRSS | 200 | pF | VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to t | 3 |
CAD (KiCad official)
- Symbol:
RFP50N06 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
rfp50n06-etched.step/rfp50n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rfp50n06.step/rfp50n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
11c450035993b9bc, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).