# RFD12N06RLESM9A

**UMW** · MOSFETs · TO-252

RFD12N06RLESM9A from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-to-source voltage is rated ±16 V (absolute maximum). |
| 2 | D | passive | Drain terminal; drain-to-source voltage is rated 60 V (absolute maximum), and the drain is the main current path. |
| 3 | S | passive | Source terminal; the datasheet gives no source-specific electrical limit beyond the device absolute maximum ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS |  |  | 60 | V | Note 1: TJ=25°C to 150°C | 1 |
| Drain to Gate Voltage | VDGR |  |  | 60 | V | RGS=20kΩ (Note 1) | 1 |
| Gate to Source Voltage | VGS | -16 |  | 16 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 17 | A | TC=25°C, VGS=5V | 1 |
| Drain Current - Continuous | ID |  |  | 18 | A | TC=25°C, VGS=10V (Figure 2) | 1 |
| Drain Current - Continuous | ID |  |  | 8 | A | TC=135°C, VGS=5V | 1 |
| Power Dissipation | PD |  |  | 49 | W | TC=25°C | 1 |
| Storage Temperature | TJ, TSTG | -55 |  | 175 | °C |  | 2 |
| Maximum Temperature for Soldering Leads | TL |  |  | 300 | °C | Leads at 0.063in (1.6mm) from case for 10s | 2 |
| Maximum Temperature for Package Body for Soldering | Tpkg |  |  | 260 | °C | Package body for 10s, See Techbrief TB334 | 2 |
| Drain to Source Breakdown Voltage | BVDSS | 60 |  |  | V | ID=250µA, VGS=0V, Figure 12 | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=55V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | µA | VDS=50V, VGS=0V, TC=150°C | 3 |
| Gate to Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±16V | 3 |
| Gate to Source Threshold Voltage | VGS(th) | 1 |  | 2.1 | V | VDS=VGS, ID=250µA, Figure 11 | 3 |
| Drain to Source On Resistance | RDS(ON) |  | 52 | 63 | mΩ | ID=18A, VGS=10V, Figure 9,10 | 3 |
| Drain to Source On Resistance | RDS(ON) |  | 60 | 71 | mΩ | ID=8A, VGS=5V, Figure 9 | 3 |
| Drain to Source On Resistance | RDS(ON) |  | 64 | 75 | mΩ | ID=8A, VGS=4.5V, Figure 9 | 3 |
| Thermal Resistance Junction to Case | RθJC |  |  | 3.06 | °C/W |  | 3 |
| Thermal Resistance Junction to Ambient | RθJA |  |  | 100 | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `RFD12N06RLESM9A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `rfd12n06rlesm9a-etched.step` / `rfd12n06rlesm9a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rfd12n06rlesm9a.step` / `rfd12n06rlesm9a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755881506554425344) (11 pp, sha256 `9944d50241854fcb`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rfd12n06rlesm9a-datasheet.pdf)