component
RFD12N06RLESM9A
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRFD12N06RLESM9A
UMW · MOSFETs · TO-252
RFD12N06RLESM9A from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-to-source voltage is rated ±16 V (absolute maximum). |
| 2 | D | passive | Drain terminal; drain-to-source voltage is rated 60 V (absolute maximum), and the drain is the main current path. |
| 3 | S | passive | Source terminal; the datasheet gives no source-specific electrical limit beyond the device absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | 60 | V | Note 1: TJ=25°C to 150°C | 1 | ||
| Drain to Gate Voltage | VDGR | 60 | V | RGS=20kΩ (Note 1) | 1 | ||
| Gate to Source Voltage | VGS | -16 | 16 | V | 1 | ||
| Drain Current - Continuous | ID | 17 | A | TC=25°C, VGS=5V | 1 | ||
| Drain Current - Continuous | ID | 18 | A | TC=25°C, VGS=10V (Figure 2) | 1 | ||
| Drain Current - Continuous | ID | 8 | A | TC=135°C, VGS=5V | 1 | ||
| Power Dissipation | PD | 49 | W | TC=25°C | 1 | ||
| Storage Temperature | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Maximum Temperature for Soldering Leads | TL | 300 | °C | Leads at 0.063in (1.6mm) from case for 10s | 2 | ||
| Maximum Temperature for Package Body for Soldering | Tpkg | 260 | °C | Package body for 10s, See Techbrief TB334 | 2 | ||
| Drain to Source Breakdown Voltage | BVDSS | 60 | V | ID=250µA, VGS=0V, Figure 12 | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=55V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS=50V, VGS=0V, TC=150°C | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±16V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1 | 2.1 | V | VDS=VGS, ID=250µA, Figure 11 | 3 | |
| Drain to Source On Resistance | RDS(ON) | 52 | 63 | mΩ | ID=18A, VGS=10V, Figure 9,10 | 3 | |
| Drain to Source On Resistance | RDS(ON) | 60 | 71 | mΩ | ID=8A, VGS=5V, Figure 9 | 3 | |
| Drain to Source On Resistance | RDS(ON) | 64 | 75 | mΩ | ID=8A, VGS=4.5V, Figure 9 | 3 | |
| Thermal Resistance Junction to Case | RθJC | 3.06 | °C/W | 3 | |||
| Thermal Resistance Junction to Ambient | RθJA | 100 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
RFD12N06RLESM9A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rfd12n06rlesm9a-etched.step/rfd12n06rlesm9a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rfd12n06rlesm9a.step/rfd12n06rlesm9a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
9944d50241854fcb, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).